Redlen Technologies, Inc.

Michael K Jackson

Pramodha Marthandam

Krzysztof Iniewski

Francis Joseph Kumar

James Balcom

Michael Ayukawa

Saeid Taherion

Jason MacKenzie

Yuxin Song

Amir Afshar

Jennifer Jensen

A method of fabricating radiation sensor dies includes forming a plurality of radiation-sensitive detector elements and a plurality of visible identifiers on at least some of the radiation-sensitive detector elements on a substrate, where each visible identifier is located in a different sub-region of the substrate containing a subset of the radiation-sensitive detector elements, and separating the sub-regions of the substrate from one another to provide a plurality of radiation sensor dies, where the visible identifier on each radiation sensor die uniquely identifies the radiation sensor die with respect to the other radiation sensor dies of the plurality of radiation sensor dies.

Radiation sensor dies having visual identifiers and methods of fabricating thereof

An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

P-type CZT radiation detector for high flux applications

A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

Compound semiconductor x-ray detector tiles and method of dicing thereof

An ionizing radiation detector, such as a photon counting computed tomography detector, includes a semiconductor material plate, a plurality of anodes located on a first side of the semiconductor material plate, where the gaps (i.e., streets) between adjacent anodes are less than 15 μm in width, and at least one cathode located on a second side of the semiconductor material plate. Ionizing radiation detectors according to various embodiments may have improved count rate stability (CRS) characteristics and a reduced number of Non-Conforming Pixels (NCPs) relative to conventional detectors.

Ionizing radiation detector with reduced street width and improved count rate stability

A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

High-performance radiation detectors and methods of fabricating thereof

A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Growing community of inventors

Victoria, Canada

Michael K Jackson