Advanced Micro Devices Corporation

Michael K Ciraula

John J Wuu

Russell J Schreiber

Carson Donahue Henrion

Samuel D Naffziger

Brian D McMinn

Jerry D Moench

Gerald David Zuraski, Jr

Eric W Busta

Jan-Michael Huber

Randal L Posey

Patrick J Shyvers

Alok Garg

Floyd L Dankert

Victor F Andrade

Ryan Thomas Freese

Gregg Donley

Alexander W Schaefer

Michael C Braganza

Amy M Novak

Andrew J Robison

Soolin Kao Chrudimsky

Jan Michael Huber

A processing system reduces by staging precharging of bitlines of a memory. In a static random access memory (SRAM) array, the voltage level on every bitline in the array is precharged to a reference voltage (VDD) rail voltage before a memory access. To facilitate reduction of current spikes from precharging, a precharge control unit groups entries of a RAM into a plurality of subsets, or regions, and applies a different precharge signal for precharging bitlines associated with each subset. Application of the precharge signals to the respective subsets over time results in smaller current spikes than simultaneous application of precharge signals to all of the bitlines.

Staged bitline precharge

An integrated circuit includes first and second through-silicon via (TSV) circuits and a steering logic circuit. The first TSV circuit has a first TSV and a first multiplexer for selecting between a first TSV data signal received from the first TSV and a first local data signal for transmission to a first TSV output terminal. The second TSV circuit includes a second TSV and a second multiplexer for selecting between a second TSV data signal received from the second TSV and the first local data signal for transmission to a second TSV output terminal. The steering logic circuit controls the first multiplexer to select the first local data signal and the second multiplexer to select the second TSV data signal in a first mode, and the first multiplexer to select the first TSV data signal and the second multiplexer to select the first local data signal in a second mode.

Flexibile interfaces using through-silicon via technology

A data processing system includes a processing unit that forms a base die and has a group of through-silicon vias (TSVs), and is connected to a memory system. The memory system includes a die stack that includes a first die and a second die. The first die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads. The group of micro-bump landing pads are connected to the group of TSVs of the processing unit using a corresponding group of micro-bumps. The first die has a group of memory die TSVs. The subsequent die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads connected to the group of TSVs of the first die. The first die communicates with the processing unit using first cycle timing, and with the subsequent die using second cycle timing.

Configuration of multi-die modules with through-silicon vias

A memory system includes a non-volatile memory unit, a content-addressable memory unit coupled to the non-volatile memory unit, and an error injection logic unit coupled to the non-volatile memory unit and the content addressable memory unit. The non-volatile memory unit is programmed to allow a first error injection onto a first data word using the error injection logic unit. The error injection logic in combination with the content addressable memory unit replaces a bit cell in the memory system. The memory system performs an evaluation of various error detection and correction techniques.

Error injection for assessment of error detection and correction techniques using error injection logic and non-volatile memory

A processing system includes a compute die and a stacked memory stacked with the compute die. The stacked memory includes a first memory die and a second memory die stacked on top of the first memory die. A parallel access using a single memory address is directed towards different memory banks of the first memory die and the second memory die. The single memory address of the parallel access is swizzled to access the first memory die and the second memory die at different physical locations.

Swizzling in 3D stacked memory

A processing system includes a shadow tag memory, which stores a plurality of entries containing coherency information for the cachelines residing at the various levels of private caches. If a cache miss occurs at a private cache, or if coherency information for a cacheline requires updating, a probe is sent to the shadow tag memory maintained at the shared cache to determine whether the requested (or affected) cacheline is stored at another private cache. The probe includes a tag which can be divided into two or more portions. To more efficiently compare the probe tag to the shadow tag entries, the comparison is performed in multiple stages based on the portions of the probe tag.

Predictive multistage comparison for associative memory

Apparatus for memory elements and related methods for performing an allocate operation are provided. An exemplary memory element includes a plurality of way memory elements and a replacement module coupled to the plurality of way memory elements. Each way memory element is configured to selectively output data bits maintained at an input address. The replacement module is configured to enable output of the data bits maintained at the input address of a way memory element of the plurality of way memory elements for replacement in response to an allocate instruction including the input address.

Memory elements for performing an allocation operation and related methods

A system for testing integrated circuit storage structures on a semiconductor wafer. A test IC manufactured on a semiconductor wafer includes a test storage structure such as a random access memory structure, for example, and an access controller including one or more clock sources. In various embodiments, the clock sources may include a ring oscillator and a pulse width generator. These clock sources may be programmable to provide a clock signal having a variety of frequencies for accessing the storage structure. In one embodiment, the frequencies provided by the access controller may be higher than a frequency that can be supplied to the wafer from ATE. In another embodiment, the pulse width generator may be programmable to provide a pulse train having a variety of duty cycles.

Wafer stage storage structure speed testing

A multi-ported register cell. The register cell includes a base cell and a plurality of history cells, each of which is coupled to the base cell. Each of the plurality history cells is coupled to write to the base cell through a first port, and each of the plurality of history cells is coupled to receive data from the base cell through a second port.

Multi-ported register cell with randomly accessible history

A circuit for implementing memory arrays using a global bitline domino read/write scheme. The memory circuit includes a plurality of cells each configured to store a bit of data. The memory circuit further includes a plurality of local bitlines, wherein each cells is coupled to one of the local bitlines. Each of the plurality of local bitlines is a differential bitline having a signal path and a complementary signal path which are cross-coupled by a pair of transistors.

Memory array with global bitline domino read/write scheme

A memory subsystem and a method of operating therefor. The memory subsystem includes a memory array having 2locations. The memory subsystem includes an address decoder and rotation logic each coupled to receive bits of a first address having n address bits. The rotation logic is also coupled to receive m rotation bits indicating a number of locations the first address is to be shifted if the first address falls within a specified range of addresses. The rotation logic and the address decoder are configured to operate in parallel with each other. Address selection logic is coupled to receive a first plurality of outputs from the address decoder and a second plurality of outputs from the rotation logic and is further configured to select a second address based on the first and second pluralities of outputs.

Decode structure with parallel rotation

An apparatus comprises a buffer comprising a plurality of entries, a plurality of age vectors, and a control circuit coupled to the buffer. Each of the age vectors corresponds to one or more of the entries. Responsive to data being provided to the buffer to be written to at least a first entry, the control circuit is configured to generate a first age vector. The first age vector corresponds to the first entry, and is indicative of which of the plurality of entries contain data that is older than the data being written to the first entry. The control circuit is configured to select an entry for reading responsive to the plurality of age vectors. The selected entry has an attribute used to select the selected entry, and other entries indicated as storing older data in the age vector corresponding to the selected entry do not have the attribute.

Circular buffer using age vectors

An apparatus comprises a buffer comprising a plurality of entries, an insert pointer, a delete pointer, a plurality of first control circuits coupled to the buffer, and a second control circuit coupled to the buffer. The entries are logically divided into a plurality of groups. Each of the first control circuits corresponds to a respective group and selects an entry from the respective group for potential reading from the buffer. Furthermore, each of the first control circuits, in the event that the delete pointer indicates a first entry in the respective group and the insert pointer wraps around the buffer and indicates a second entry in the respective group, selects the first entry if the first entry is eligible for selection. The second control circuit selects a first group, and the entry selected from the first group by the first control circuits is the entry read from the buffer.

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Fort Collins, CO, United States of America

Michael K Ciraula