Soraa, Inc.

Sandia Corporation

Glo Ab

Nanosys, Inc.

Michael Joseph Cich

Aurelien J F David

Rafael Ignacio Aldaz

Christophe A Hurni

Michael Ragan Krames

Kenneth John Thomson

Fariba Danesh

Max Batres

Jin K Kim

Zhen Chen

Malcolm Carroll

Aaron Gin

Phillip F Marsh

Erik W Young

Mark Philip D'Evelyn

Daniel F Feezell

Rajat Sharma

Christopher Nordquist

Thomas M Katona

John F Klem

Michael C Wanke

Benjamin Leung

Tsun Yin Lau

Brian Kim

Mark Lee

Miao-Chan Tsai

Ansel Reed

Nathan Young

Samuel D Hawkins

Zulal Tezcan

A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.

Light emitting diodes containing deactivated regions and methods of making the same

A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.

Sub pixel light emitting diodes for direct view display and methods of making the same

A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Etendue enhancement for light emitting diode subpixels

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm.

High-performance LED fabrication

A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, a dielectric matrix layer located on the front side of the backplane and laterally surrounding the array of light emitting diodes, a transparent conductive layer contacting a front side surface of light emitting diodes within the array of light emitting diodes, and a patterned bus electrode layer electrically shorted to the transparent conductive layer and including an array of openings therein. Each light emitting diode within the array of light emitting diodes is located within an area of a respective opening through the patterned bus electrode layer. The patterned bus electrode layer can include at least one light-absorptive electrically conductive layer providing light absorption. Alternatively or additionally, the patterned bus electrode layer can include a reflective metal layer.

Light emitting diode array containing a multilayer bus electrode and method of making the same

A method of forming a III-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.

III-nitride LED with tunnel junction

A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening

A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

Contacts for an N-type gallium and nitrogen substrate for optical devices

Contacts for an n-type gallium and nitrogen substrate for optical devices

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 &#x3bc;m to about 400 &#x3bc;m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10cm.

Photon detector configured to employ the Gunn effect and method of use

Techniques for manufacturing optical devices are disclosed. More particularly, light emitting diodes and in particular to ohmic contacts for light emitting diodes are disclosed.

Growing community of inventors

Fremont, CA, United States of America

Michael Joseph Cich