Advanced Technology Materials, Inc.

Michael Jones

Thomas J Grebinski

James E Currie

William H Mullee

Thomas H Baum

David Daniel Bernhard

Ying Ma

Deepak Verma

Ann Nguyen

Richard Brewer

Glen Jenkins

A method and system for separating impurities, such as large abrasive particles and foreign matter from an abrasive polishing slurry prior to a Chemical Mechanical Polishing (CMP) procedure performed on a surface of a semiconductor wafer. Impurities greater than about 25 microns are removed by an initial filtration process. The filtrate is then introduced to a solid bowl, sedimentation-type centrifuge to remove particles greater than 0.5 microns thereby providing a polishing slurry for final utilization in a CMP procedure that reduces damage to the surface of the polished semiconductor wafer.

Preparation of high performance silica slurry using a centrifuge

An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.

Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same

A planarization composition is set forth for chemical mechanical planarization of dielectric layers for semiconductor manufacture. The composition comprises spherical silica particles having an average diameter of from 30 nm to about 400 nm, and a narrow range of particle sizes, wherein about 90% of the particles is within 20% of the average particle diameter. The composition includes a liquid carrier comprising up to about 9% alcohol and an amine hydroxide in the amount of about 0.2 to about 9% by weight. The pH of the composition is in the range of about 9 to about 11.5, and the remainder of the solution is water. The composition has low amounts of metal ions, and the composition is used for thinning, polishing and planarizing interlayer dielectric thin films, shallow trench isolation structures, and isolation of gate structures. The invention also comprises methods for using the planarization composition in the manufacture of semiconductor devices.

Planarization compositions and methods for removing interlayer dielectric films

A planarization composition is set forth in accordance with an embodiment of the invention. The composition comprises spherical silica particles having a weight average particle diameter which falls within the range from about 0.03&mgr; to about 2&mgr; and is monodisperse in that at least about 90 weight percent of the particles have a variation in particle diameter from the average particle diameter of no more than about &plusmn;20%. A liquid carrier comprising up to 20 weight percent ROH, and an amine hydroxide which is NR,OH or NR,NR,OH, where each R is HCH,, CH,CH,, C,H,or C,H,, in the amount of 0.1 to 10 weight percent; an oxidizer which is in the amount from about 0.5% to 15% weight percent; an acid stabilizer for adjusting the pH to fall within a range from about 7.0 to about 0.5; and the remainder is water. The invention also relates to a thinning, polishing and planarizing apparatus and to a method for carrying out the thinning, polishing and planarizing operation.

Planarization composition for removing metal films

A planarization composition is set forth in accordance with an embodiment of the invention. The composition comprises spherical silica particles having a weight average particle diameter which falls within the range from about 0.03.mu. to about 2.mu. and is mono-disperse in that at least about 90 weight percent of the particles have a variation in particle diameter from the average particle diameter of no more than about .+-.20%. A liquid carrier comprising up to 20 weight percent ROH, and an amine hydroxide which is NR.sub.4 OH or NR.sub.2 NR.sub.3 OH, where each R is HCH.sub.3, CH.sub.2 CH.sub.3, C.sub.3 H.sub.7 or C.sub.4 H.sub.9, in the amount of 0.1 to 10 weight percent; an oxidizer which is in the amount from about 0.5% to 15% weight percent; an acid stabilizer for adjusting the pH to fall within a range from about 7.0 to about 0.5; and the remainder is water. The invention also relates to a thinning, polishing and planarizing apparatus and to a method for carrying out the thinning, polishing and planarizing operation.

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Sunnyvale, CA, United States of America

Michael Jones