Nexgen Semi Holding, Inc.

Nexgensemi Holdings Corporation

Nextgen Semi Holding, Inc.

Michael John Zani

Mark Joseph Bennahmias

Jeffrey Winfield Scott

Mark Mayse

Mark Anthony Mayse

During nanoscale manufacture on a substrate, payload active agents are loaded on a delivery platform, with a release layer between the delivery platform and the payload active agent and an encapsulate over the payload active agent. The combined delivery platform, release layer, active agent payload, and encapsulant form a nanoscale drug delivery vehicle for subsequent delivery to a patient. The nanoscale drug delivery vehicle is small enough to permeate through the cell and deliver the payload active agent within the cell via reducing the retaining functionality of the release layer and degrading of the encapsulant. The nanoscale drug delivery vehicle offers a series of improved features including greater control of size, shape, dosage, bioavailability, cell targeting, and release timing.

Drug delivery systems and methods for making and using the same

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one- or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

Method and device for spatial charged particle bunching

Systems and methods of charge-neutralizing charged particle beams are contemplated, wherein an originating beam is transited through a sequence of slow wave recombination chambers and exposed to neutralizing beams while transit therethrough in order to produce a neutral particle beam. These systems and methods may be seen to be especially suitable for use in spacecraft or other ungrounded environments where the removal of excess charge buildup represents a substantial barrier, and when utilized in a directed energy weapon, may greatly increase the rate at which successive beam pulses may be directed against a target or against multiple targets.

Pulsed ion beam to pulsed neutral particle beam slow wave converter device and method for use thereof

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Apparatus and method for controlled particle beam manufacturing

Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlOas a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlOas a gate dielectric are also possible.

Apparatus and method for manufacturing multi-component oxide heterostructures

A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.

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Laguna Niguel, CA, United States of America

Michael John Zani