University of Michigan

Arm Limited

Michael John Wieckowski

David Theodore Blaauw

Stuart David Biles

Dennis Sylvester

David Alan Fick

Scott McLean Hanson

Dennis Michael Chen Sylvester

Gregory Kengho Chen

Yoonmyung Lee

An apparatus for processing datais provided with a time-to-digital converterwhich serves to measure signal processing delay through one or more signal paths through a processing stage. This measured delay generates a delay value representing a plurality of instances of the signal processing delay which have been measured. Analysis is performed under software control to estimate a worst case signal processing delay through the processing stage based upon the delay values which have been generated. An adjustment of the operating parameters, such as supply voltage and clock frequency, of the apparatus is made to provide a timing margin through the processing stage sufficient to satisfy the worst case signal processing delay which has been estimated without an excessive margin.

Operating parameter control of an apparatus for processing data

A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, and the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack includes at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. Such a memory cell structure is efficient in terms of area, and can be manufactured using standard CMOS logic manufacturing processes, thereby avoiding some of the complexities involved in the production of conventional EEPROM and Flash memory devices.

Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device

Growing community of inventors

Ann Arbor, MI, United States of America

Michael John Wieckowski