Trw Limited

Glo Ab

Bandwidth9, Inc.

Coherent, Inc.

Koninklijke Philips Corporation N.v.

Nanosys, Inc.

Philips Lumileds Lighting Company LLC

Pacific Light Technologies Corp.

Nuburu, Inc.

Other

Intematix Corporation

Necsel Intellectual Property, Inc.

Arasor Corporation

Osram Opto Semiconductors Gmbh

Michael Jansen

Constance J Chang-Hasnain

Wupen Yuen

Rashit Nabiev

Jane J Yang

Julien Boucart

Fariba Danesh

Richard P Schneider, Jr

Jaroslava Z Wilcox

Nathan Fredrick Gardner

Fan Ren

William W Simmons

Moshe Sergant

Szutsun S Ou

Arvydas Umbrasas

Sheng-Min Wang

Mark S Zediker

Giorgio Giaretta

Dan Botez

Luke J Mawst

Serguei Anikitchev

Tsun Yin Lau

Max Batres

Thomas J Roth

Matthew Silva Sa

Larry R Eaton

Hui-Yu Huang

Jean Philippe Feve

Andrei V Shchegrov

Juanita N Kurtin

Jason Paul Watson

Arnold H Silver

John Lawrence Nightingale

Jason King

John M Green

Weiwen Zhao

Michael Hmelar

Aram Mooradian

Hyung-Chul Lee

Kazunori Okui

Rashit F Nabiev

Nathan Mclaughlin

Phillip D Hayashida

Gary L Peterson

Kai Liu

Julian Carey

Mark Swoboda

Dennis P Bowler

Simon S Ou

Ronii Chris Mehl

Ian Edmond

Fang Fang

Neil Deeman

Dicky Lee

Rene Dato

Jason P Watson

John W Green

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

Multi kW class blue laser system

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Light emitting diode containing oxidized metal contacts

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of &#x3c;5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of &#x3c;1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of &#x3c;10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Indium gallium nitride red light emitting diode and method of making thereof

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

A direct view display device includes a printed circuit board, an array of pixels located on a first side of the printed circuit board, each pixel including a plurality of light emitting diodes, and an isolation grid comprising a light absorbing material located between the pixels in the array of pixels.

Small pitch direct view display and method of making thereof

A micro-lensed, light emitting device including, a backplane, light emitting diodes (LEDs) disposed on the backplane, an encapsulation layer encapsulating the LEDs, and micro-lenses disposed on the encapsulation layer and configured to reduce an emission angle of light emitted from the LEDs.

Micro-lensed light emitting device

A light bar includes a plurality of light emitting diode (LED) clusters which extend along a lengthwise direction of the light bar from a first end of the light bar to an opposite second end of the light bar. Each LED cluster includes at least three different types of LEDs. A first LED at the first end of the light bar and a last LED at the second end of the light bar emit the same color light.

Light bar containing symmetric LED placement and method of making thereof

A light engine includes a housing containing a rectangular aperture, a polarizer disposed in the housing facing the aperture, a light emitting diode (LED) array disposed in the housing, and a light guide configured to guide light emitted from the LED array toward the aperture, such that light is emitted through the aperture.

Narrow angle light engine

A camera flash comprises a solid-state light source (laser chip) operable to emit excitation light having an emission peak wavelength in a first wavelength range and a photoluminescence wavelength conversion component located remote to the light source. The photoluminescence wavelength conversion component comprises at least one photoluminescence material (phosphor) that is excitable by the excitation light and in response emits light having an emission peak wavelength in a second wavelength range. The light source is configured such that excitation light is incident on an area of the photoluminescence wavelength conversion component less than about 0.01 mm. The photoluminescence wavelength conversion component can comprise a light reflective or light transmissive component.

Compact solid-state camera flash

An LED is fabricated with a composite layer including quantum dots (QDs), wherein the QDs are provided in a silicone paste. A plurality of QD silicone paste reservoirs each contain a provided silicone paste with QDs of different wavelengths. Further, a silicone paste reservoir containing a clear silicone paste. A paste mixing chamber, in to which the QD paste reservoirs and the silicone paste reservoir supply their respective pastes, mixes together the pastes and form a mixed QD silicone paste. A silicone mixing and metering component receives the mixed QD silicone paste from the paste mixing chamber, and further receives A silicone and B silicone from a respective A silicone reservoir and a B silicone reservoir, measures, and mixes the mixed QD silicone paste with the A and B silicones to form a silicone polymer composite. A dispensing component receives to the silicone polymer composite from the mixing and metering component and dispenses the composite to a molding tool.

Quantum dot (QD) delivery method

Photoluminescence quantum yield (PLQY) testing of quantum dots is described. In one embodiment, a method involves heating a sample including quantum dots and illuminating the sample with a light source. The method involves measuring spectra of luminescence from the illuminated quantum dots of the sample at each of a plurality of temperatures. The method involves measuring each of the plurality of temperatures with a temperature sensor. The PLQY at each of the plurality of temperatures is computed based on the measured spectra. The method further involves computing a relationship between QD emission wavelength of the measured spectra and the plurality of temperatures measured with the temperature sensor. The relationship is used to determine the QD temperature corresponding to each of the PLQY computations. In one embodiment, an integrating sphere moves on a gantry over the samples.

Photoluminescence quantum yield (PLQY) test of quantum dot (QD) films

Growing community of inventors

Palo Alto, CA, United States of America

Michael Jansen