Lucent Technologies Inc.

Michael James Manfra

Nils Guenter Weimann

Julia Wan-Ping Hsu

Julia Wang-Ping Hsu

An apparatus includes a crystalline substrate having a top surface, a crystalline semiconductor layer located on the top surface, and a plurality of dielectric regions. The crystalline semiconductor layer includes group III-nitride and has first and second surfaces. The first surface is in contact with the top surface. The second surface is separated from the top surface by semiconductor of the crystalline semiconductor layer. The dielectric regions are located on the second surface. Each dielectric region is distant from the other dielectric regions and covers an end of an associated lattice defect. Each lattice defect threads the crystalline semiconductor layer.

Apparatus with improved layers of group III-nitride semiconductor

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.

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Clinton, NJ, United States of America

Michael James Manfra