Agere Systems Inc.

Agere Systems Guardian Corp.

Michael James Manfra

Yiu-Huen Wong

Loren Neil Pfeiffer

Kenneth William West

An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600&deg; C. and subsequently annealed at a substrate temperature of about 950&deg; C.

MOS transistor having aluminum nitride gate structure and method of manufacturing same

A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

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Short Hills, NJ, United States of America

Michael James Manfra