International Business Machines Corporation

Asml Netherlands B.v.

Other

Michael James Lercel

Jed Hickory Rankin

Dario Leonardo Goldfarb

Charles W Koburger, Iii

Kirk David Peterson

Dirk Pfeiffer

Daniel Sanders

Randy William Mann

Sean David Burns

James Spiros Nakos

David Robert Medeiros

Alexander Ypma

Boris Menchtchikov

Colin J Brodsky

Hakki Ergün Cekli

Jonathan Daniel Chapple-Sokol

Steven A Scheer

Peter Ten Berge

Libor Vyklicky

Chenxi Lin

Simon Hendrik Celine Van Gorp

Simon Philip Spencer Hastings

Cyrus Emil Tabery

Dag Sonntag

Ruben Alvarez Sanchez

Pierre-Yves Jerome Yvan Guittet

Christiaan Theodoor De Ruiter

Wei Duan

Shih-Chin Liu

Steven J Holmes

John Joseph Pekarik

Daniel A Corliss

James Allan Bruce

Emily Gallagher

Kurt R Kimmel

Andrew J Watts

Kenneth Christopher Racette

Cameron James Brooks

David Louis Walker

Lynn A Powers

John Joseph Prxarik

James Allen Bruce

Rogert K Leidy

Dhirendra Prasad Mathur

A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

Method to predict yield of a device manufacturing process

An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.

Graded spin-on organic antireflective coating for photolithography

A novel arrangement and method for depositing evaporation control agents so as to coat immersion lithographic solutions which are employed on the surface of semiconductor wafers in connection with the etching of the surfaces of the wafer through the intermediary of an immersion lithographic process.

Evaporation control using coating

A monolithic optical pellicle and method of making used to protect a photomask during photolithography processing. The monolithic optical pellicle is comprised of a pellicle plate having a recessed central portion integrally formed with a perimeter frame of the pellicle plate such that it is a one-piece optical pellicle. The monolithic optical pellicle comprises a material of sufficient rigidity to minimize distortions in and maximize durability of the pellicle when used in combination with the recessed portion having a thickness that prevents sagging thereof due to applied forces on the resultant monolithic optical pellicle. This recessed central portion is the optical pellicle portion of the present monolithic optical pellicle, while the integral perimeter frame is used to attach the monolithic optical pellicle at the desired stand-off distance to a photomask. The monolithic optical pellicle preferably comprises a material that is transparent to an exposure field at about 157 nm wavelengths.

Monolithic hard pellicle

A method of producing a particle beam mask and mask structures to allow for the use of dummy fill shapes. This invention overcomes distortion in by adding a dummy shape in unexposed regions and applying a blocking layer to cover the dummy shape. The blocking layer is comprised of an aperture or additional mask mounted close to the mask or can be added to the mask itself.

Pattern compensation techniques for charged particle lithographic masks

The current invention provides a method and apparatus that minimizes the destructive effects of non-reflected energy during lithography. More specifically, a cooling system is located within the mask. In one example, a cooling module is integrated into the EUV mask. The cooling module may be thermoelectric. The EUV mask comprises a substrate structure as a base for a reticle, a cooling layer, which is formed on the substrate structure and a planarizing layer deposited on the cooling layer. In another example, a cooling channel is formed within the mask.

Integrated cooling substrate for extreme ultraviolet reticle

A method and structure for forming subfield regions includes mechanical definition of the substrate through machining or mold forming. The subfield regions are filled with a sacrificial layer before the thin membranes are deposited. Slots are mechanically machined through a substrate (the slots have dimensions of membrane subfields) and filled with a sacrificial material. The substrate is planarized. A membrane material is deposited over the substrate and patterned. The sacrificial layer is then removed. A mold can be utilized to form the slotted substrate in place of the machining operation.

Method of defining and forming membrane regions in a substrate for stencil or membrane marks

A mask includes an in-situ information storage mechanism on the mask, which stores mask pattern data that is supplied to a microlithographic tool (e.g., an optical stepper). The advantages of using the invention include immediate availability of pattern data of a particular mask to the microlithographic tool for improved integrated circuit productivity.

Information storage on masks for microlithographic tools

Methods are provided for making stencil masks from a mask substrate preferably having sequential layers of a backside hardmask, a mask substrate, a stencil pattern forming layer and preferably a frontside hardmask layer. In one method a backside protective layer is formed after a backside etch and substrate window etch to protect the stencil pattern forming layer during the stencil pattern forming layer etching process. In another method of the invention, a frontside protective layer is provided over the etched stencil pattern forming layer surface before the substrate layer etch to form a mask window. In both methods enhanced control of critical dimensions of the mask and profile control are achieved since are backside cooling of the substrate during making of the mask can be used during the mask fabrication process.

Etch stop barrier for stencil mask fabrication

In accordance with the present invention, a method for forming a stencil mask from a difficult to form material, such as diamond, is provided. A stencil mask formed of diamond in accordance with the present invention provides advantageous properties of heat transmission and stiffness. The method in accordance with the present invention utilizes a nucleation layer over an etch stop layer. The nucleation layer facilitates the growth of a diamond film. The etch stop layer may comprise a buried oxide layer and the nucleation layer may comprise a thin layer of silicon. The buried oxide layer provides an etch stop for use in the definition of the diamond membrane and in the etching of the diamond layer to form the stencil. The use of the buried oxide layer as an etch stop provides improved profile control of the etches.

Substrate for diamond stencil mask and method for forming

A borderless contact to diffusion with respect to gate conductor is provided by employing a double insulating film stack as a mask for defining the gate conductor shapes for the entire chip and providing a relatively thin damage preventing layer on exposed conductive layer following defining the gate conductor shapes. In one embodiment, a borderless contact is provided by forming an insulating layer on a substrate, providing a conductive layer on the insulating layer, providing a second insulating layer on the conductive layer, providing a third insulating layer on the second insulating layer, removing preselected portions of the second and third insulating layers, providing a damage preventing layer in those areas where the second and third insulating layers have been removed, removing preselected portions of the third insulating layer, removing the damage preventing layer, removing exposed portions of the conductive layer, and removing now exposed portions of the second insulating layer.

Borderless contact to diffusion with respect to gate conductor and methods for fabricating

A method of programming a conductive semiconductor device having a plurality of conductive links by selective removal of all or portions of the conductive link using photolithographic and subtractive etching. Removal of only pre-selected conductive links is accomplished by use of a programmable array shutter to expose photoresist only above the conductive links to be removed.

Method and apparatus for selectively programming a semiconductor device

A stencil or scatterer mask for use with charged particle beam lithography such as projection electron-beam lithography comprises a membrane layer of a material having a Young's modulus of at least about 400 GPa and support struts supporting a surface of the membrane. The struts form and surrounding a plurality of discrete membrane areas of different aspect ratios aligned to design regions of an integrated circuit. The discrete membrane areas have different aspect ratios range from about 1:1 to about 12:1, and the discrete membrane areas have different size surface areas. The membrane is preferably silicon carbide, diamond, diamond-like carbon, amorphous carbon, carbon nitride or boron nitride. When used in scatterer masks, the ratio of discrete membrane area to membrane thickness is at least about 0.18 mm,/nm. When used in stencil masks, the ratio of discrete membrane area to membrane thickness is at least about 1.0 mm,/nm. The stencil mask is made by depositing a diamond membrane film patterned with a hardmask layer on a substrate, depositing an etch stop layer adjacent the diamond film, and forming supporting struts surrounding a plurality of discrete areas of the membrane film. The method then includes depositing a pattern over the membrane film within the discrete membrane film areas, the pattern conforming to one or more desired circuit elements, and etching the membrane film with a reactive ion etch containing oxygen to form openings in the membrane film.

Projection electron-beam lithography masks using advanced materials and membrane size

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Williston, VT, United States of America

Michael James Lercel