Silicon Storage Technology, Inc.

Michael James Heinz

Thuan Vu

Xian Liu

Jack Frayer

Alexander Kotov

Eugene Jinglun Tam

Tho Ngoc Dang

Michael K Doan

Jung Hee Yun

A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.

Non-volatile memory device with plural reference cells, and method of setting the reference cells

A method and apparatus for partially strapping two polysilicon lines, each having a first end and second end, uses a metal line having a plurality of spaced apart metal segments with each metal segment partially strapping a different portion of a polysilicon line. The metal segments are arranged from the first end to the second end with the signals propagating from the second end to the first end. Where two metal segments are used, the segments have lengths of and L-X where L is the length between the first end and the second end. Where three segments are used, the segments have lengths of X=0.25 L, Y=0.48 L, and Z=0.27 L.

Method and apparatus for strapping two polysilicon lines in a semiconductor integrated circuit device

A method and apparatus for partially strapping two polysilicon lines, each having a first end and second end, uses a metal line having a plurality of spaced apart metal segments with each metal segment partially strapping a different portion of a polysilicon line. The metal segments are arranged from the first end to the second end with the signals propagating from the second end to the first end. Where two metal segments are used, the segments have lengths of and L&#x2212;X where L is the length between the first end and the second end. Where three segments are used, the segments have lengths of X=0.25L, Y=0.48L, and Z=0.27L.

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Livermore, CA, United States of America

Michael James Heinz