Koninklijke Philips Corporation N.V.

U.S. Philips Corporation

Michael J Trainor

Steven Charles Deane

Ian D French

Brian P McGarvey

John R A Ayres

Darren T Murley

John Ra Ayres

An active matrix substrate includes a row and column array of active elements. Each element is associated with a TFT having a gate electrode connected to a corresponding row conductor and source and drain (electrodes connected to corresponding column conductors. Circuitry for protecting against electrostatic discharge (ESD) is connected to at least one of the row conductors for protecting the TFTs against ESD.

Active matrix substrate

An active matrix substrate includes a row and column array of active elements. Each element is associated with a TFT having a gate electrode connected to a corresponding row conductor and source and drain (electrodes connected to corresponding column conductors. Circuitry for protecting against electrostatic descharge (ESD) in connected to at least one of the row conductors for protecting the TFTs against ESD. A method for manufacturing the active matrix substrate includes forming semiconductor regions of the TFTs and the ESD protective circuitry, depositing gate electrodes of the TFTs and corresponding row conductors, and depositing source and drain electrodes of the TFTs and corresponding column conductors. The ESD protective circuitry operates to control ESD prior to deposition of the column conductors.

Method of manufacturing an active matrix substrate

Method of manufacturing a transistor

A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode ( ) of chromium nitride and the semiconductor film ( ) of the circuit element and/or another conductive film such as a connection track ( ) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of propertied for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.

Electronic device and their manufacture

A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of properties for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.

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Horley, United Kingdom

Michael J Trainor