Texas Instruments Corporation

Ford Aerospace & Communications Corporation

Loral Fairchild Corporation

Michael J McNutt

Robin C Sarma

Yu-Sang Lin

Simon Edward Willard

Geert Deveirman

Jay Standiford

Rajagopal Sundararaman

A method for measuring a capacitance of a device under test is provided that includes selectively charging and discharging a first conductor with a first set of p and n element-pairs in response to a voltage potential applied to the first set of p and n element-pairs. The method further includes selectively charging and discharging a second conductor with a second set of p and n element-pairs in response to a voltage potential applied to the second set of p and n element-pairs. Currents are measured at drains associated with the first set of p element-pairs as the first and second conductors charge and discharge such that a capacitance associated with the first conductor may be determined that is based on the drain currents.

System and method for measuring a capacitance of a conductor

A method for measuring a capacitance of a semiconductor is provided that includes positioning a measurement circuit in a scribe line area associated with the semiconductor. The scribe line area is indicative of a delineation that separates one or more portions of the semiconductor. A capacitance of one or more elements included within the one or more portions of the semiconductor is then measured using the measurement circuit. The method also includes comparing the capacitance measurement of the one or more elements included within the one or more portions of the semiconductor to a reference set of capacitance values such that a parameter associated with a manufacturing process that generated the semiconductor may be checked.

System and method for using a capacitance measurement to monitor the manufacture of a semiconductor

An on-chip fuse circuit. The circuit includes a fuse capable of being blown during a programming operation, as well as output logic for determining whether the fuse is blown. A protection circuit is provided for protecting the output logic during programming. An evaluation circuit is provided, for evaluating whether the fuse is blown. The evaluation circuit includes a first current source coupled to the fuse, providing a first predetermined current so as to activate the output logic to read out the condition of the fuse during normal operation, as well as a second current source coupled to the fuse, providing a second predetermined current, substantially less than the first predetermined current, so as to activate the output logic to read out the condition of the fuse during an evaluation mode such that a blown condition is indicated by the output logic only if the resistance of the fuse is substantially greater than that required for the output logic to indicate a blown condition during normal operation. According to another aspect of the invention there is provided an on-chip fuse circuit including a first fuse and a second fuse, both being capable of being blown during a programming operation. Output logic is provided for determining whether the fuse is blown, the output logic including first indication logic for indicating whether both of the fuses are blown, during an evaluation mode, and second indication logic for indicating a blown state of the fuse circuit if either of the fuses is blown. A protection circuit is provided for protecting the output logic during programming. An evaluation circuit is provided for evaluating whether the fuse is blown.

Fuse cell for on-chip trimming

Methods and apparatus for implementing charge skimming and variable integration time in focal plane arrays formed in a silicon substrate. The present invention provides for pulsing a field plate that lies over a diode disposed in the substrate in order to provide for charge skimming and variable integration time. The field plate is normally dc biased to suppress diode edge leakage. No additional structure is needed in the silicon substrate, and basic readout clocking is unaffected. Any interline transfer focal plane array can benefit from using the principles of the present invention.

Charge skimming and variable integration time in focal plane arrays

The fill factor in a Pt:Si imager is greatly improved by (1) biasing the reflector plate as a field plate to eliminate the need for an N.sup.- guard ring along the edges of the imaging diodes; (2) reconfiguring the meander channel to use a single meander channel for two columns of diodes; and (3) using a self-demultiplexing output bus structure which requires no separate array space for clocking buses. Two different types of dual-sided meander channel are described.

Platinum silicide imager

A programmable voltage offset circuit (PVOC) (1) comprises a temporary latch memory (7); a latch disable circuit (5) which selects that PVOC (1) among several such circuits which may be simultaneously present on the same semiconductor chip; a resistor array (3); and a programmable nonvolatile memory (37). The desired voltage offsets V(OFFSET)s are temporarily produced in an iterative manner using the latch memory (7). Quasi-permanent voltage offsets V(OFFSET)s are then programmed using the nonvolatile memories (37), each of which typically comprises an EPROM (39). Application of an avalanche voltage V(STORE) to a PFET (43) portion of the EPROM (39) causes the PFET (43) to avalanche, thereby selectively programming the nonvolatile memory (37), depending upon the status of a signal supplied from the latch memory (7).

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El Toro, CA, United States of America

Michael J McNutt