University of Illinois

Michael J McNallan

Yury Gogotsi

Daniel Allen Ersoy

A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to (he formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0% (trace) amounts to 100% halogen-containing gaseous etchant, e.g., Cl , and about 0% to 99.9% H (hydrogen gas) at temperatures from about 100&deg; C. to about 4,000&deg; C., preferably about 800&deg; C. to about 1,200&deg; C., over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres.

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Oak Park, IL, United States of America

Michael J McNallan