Advanced Micro Devices Corporation

Michael J McBride

James Garcia

Basab Bandyopadhyay

Douglas J Bonser

Matthew S Ryskoski

Jesse C Ramos

Pirainder S Lall

Mark E Culp

The present invention is generally directed to various advanced process control methodologies for thermal oxidation processes, and various systems for accomplishing same. In one illustrative embodiment, the method comprises measuring an ambient pressure of an environment external to an oxidation chamber, determining a correction factor based upon at least the measured ambient pressure, determining at least one parameter of a thermal oxidation process to be performed in the oxidation chamber based upon the determined correction factor, and performing the thermal oxidation process comprised of the determined parameter on at least one substrate positioned in the oxidation chamber.

Advanced process control of thermal oxidation processes, and systems for accomplishing same

Methods and apparatus are provided for measuring contaminant mobile ions in a dielectric portion of a semiconductor. The apparatus is comprised of a heat source configured to elevate a temperature of the dielectric portion of the semiconductor and mobilize the contaminant mobile ions. The apparatus is also comprised of a fluid source configured to expose the dielectric portion of the semiconductor to a mobilizing fluid having contaminant ion releasing atoms that assists in mobilizing the contaminant mobile ions. The apparatus further comprises a mobile ion measurement unit configured to perform measurements of the contaminant mobile ions in the dielectric portion of the semiconductor.

Apparatus for measuring contaminant mobile ions in dielectric materials

In accordance with the present invention, a method is provided for measuring contaminant mobile ions in a dielectric portion of a semiconductor. The method is comprised of elevating a temperature of the dielectric portion of the semiconductor and exposing the dielectric portion of the semiconductor to a mobilizing fluid having contaminant releasing atoms that assist in mobilizing the contaminant mobile ions within the dielectric portion of the semiconductor. After elevating the temperature of the dielectric portion and exposing the dielectric portion to mobilizing fluid, the contaminant mobile ions within the dielectric portion of the semiconductor are measured according to the present invention.

Methods for measuring contaminant mobile ions in dielectric materials

A method of forming an improved isolation trench between active regions within the semiconductor substrate involves oxidizing unmasked portions of a semiconductor substrate prior to etching an isolation trench into the semiconductor substrate. By oxidizing the unmasked portions of the semiconductor prior to etching, an isolation trench with rounded corners may be formed.

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Austin, TX, United States of America

Michael J McBride