Micron Technology Incorporated

Michael J Gossman

Lifang Xu

Matthew J King

Matthew Park

Jason Reece

Mithun Kumar Ramasahayam

Bo Zhao

Justin B Dorhout

David A Kewley

Adam L Olson

Xiaosong Zhang

M Jared Barclay

Shruthi Kumara Vadivel

Biow Hiem Ong

Martin Jared Barclay

Joel D Peterson

Tien Minh Quan Tran

Eldon Nelson

Kah Sing Chooi

Zhen Feng Yow

A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Microelectronic devices including stadium structures

An electronic device that comprises bitlines and air gaps adjacent to an array region of an electronic device is disclosed. The bitlines comprise sloped sidewalls and a height of the air gaps is greater than a height of the bitlines. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

Electronic devices comprising air gaps adjacent to bitlines

Electronic devices comprising air gaps adjacent to bitlines and related methods and systems

A method used in forming integrated circuitry comprises forming a stack of vertically-alternating tiers of different composition materials. A stair-step structure is formed into the stack and an upper landing is formed adjacent and above the stair-step structure. The stair-step structure is formed to comprise vertically-alternating tiers of the different composition materials. A plurality of stairs individually comprise two of the tiers of different composition materials. At least some of the stairs individually have only two tiers that are each only of a different one of the different composition materials. An upper of the stairs that is below the upper landing comprises at least four of the tiers of different composition materials. Structure independent of method is disclosed.

Integrated circuitry, memory integrated circuitry, and methods used in forming integrated circuitry

Growing community of inventors

Meridian, ID, United States of America

Michael J Gossman