Sensors Unlimited

Michael J Evans

Wei Zhang

Wei Huang

Douglas Stewart Malchow

John Liobe

Paul L Bereznycky

Namwoong Paik

Michael Delamere

Krishna Linga

Sungjin Kim

De Hsin Chang

Sean T Houlihan

A system for aligning components of an imaging device includes an imaging device, and a test camera. The imaging device includes a lens and a focal plane array (FPA). The FPA defines an optical axis and includes at least two test elements configured and adapted to emit a light through the lens. The test camera is configured and adapted to be mounted to and pre-aligned with the lens of the imaging device to receive a light from the at least two test elements.

Systems and methods for aligning imaging devices

A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.

Hybridization bumps for fine pitch sensor arrays

A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.

Visible-swir hyper spectral photodetectors with reduced dark current

A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

Pin mesa diodes with over-current protection

A system includes a pixel having a diffusion layer within a cap layer. The diffusion layer defines a front side and an illumination side opposite the front side with an absorption layer operatively connected to the illumination side as well as the diffusion and cap layers. A set of alternating oxide and nitride layers are deposited on the front side of the cap and diffusion layers.

Low capacitance photo detectors

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

Pin diodes with over-current protection

A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

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Yardley, PA, United States of America

Michael J Evans