Bae Systems Information and Electronic Systems Integration Inc.

Michael J Bear

Thomas M Storey

Multi-pattern data retention testing and iterative change of measurement testing are used for the production of Known Good Dies. Multi-pattern data testing of a memory such as an SRAM comprises writing at V , reduction of V , restoration of V , reading of the memory, and comparison of write patterns to read patterns to determine accuracy of data retention. Iterative or change of measurement testing involves repeated testing of a die to determine changes in Iddq, changes in multi-pattern data retention, or other changes in chip operating parameters. Defect activating test may be used in combination with change of measurement testing or with multi-pattern data retention testing.

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Centerville, VA, United States of America

Michael J Bear