University of California

Japan Science and Technology Agency

Michael Iza

Shuji Nakamura

Steven P DenBaars

Hitoshi Sato

John F Kaeding

Benjamin A Haskell

Troy J Baker

James Stephen Speck

Dong-Seon Lee

Hirokuni Asamizu

Hong Zhong

Eu Jin Hwang

Robert M Farrell

Hiroshi Sato

Christian J Zollner

A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

Method for processing of semiconductor films with reduced evaporation and degradation

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.

Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates

A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {101} GaN films deposited on {100} MgAlOspinel substrate miscut in the &#x3c;011&#x3e; direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Method for conductivity control of (Al,In,Ga,B)N

A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InGaN and InGaN where 0&#x3c;x&#x3c;1 and 0&#x2266;y&#x3c;1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.

(Al, In, Ga, B)N device structures on a patterned substrate

A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Miscut semipolar optoelectronic device

(Al,In,Ga,B)N device structures on a patterned substrate

A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50 nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150&#xb0; C. above the growth temperature.

Method for deposition of magnesium doped (Al, In, Ga, B)N layers

Method for improved growth of semipolar (Al,In,Ga,B)N

A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.

A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.

Growing community of inventors

Santa Barbara, CA, United States of America

Michael Iza