Advanced Micro Devices Corporation

Michael Ignatowski

Nuwan S Jayasena

Gabriel H Loh

Michael J Schulte

David Andrew Roberts

Shaizeen Dilawarhusen Aga

James Michael O'Connor

Bradford Michael Beckmann

Vilas K Sridharan

Allen H Rush

Lisa R Hsu

Mark Richard Nutter

Sergey Blagodurov

Mitesh Ramesh Meswani

John Kalamatianos

Sudhanva Gurumurthi

Ganesh Suryanarayan Dasika

Shrikanth Ganapathy

Amin Farmahini Farahani

Vignesh Adhinarayanan

Angela Beth Dalton

John Robert Slice

Hyung-Dong Lee

Valentina Salapura

Mark Douglas Hummel

Mauricio Breternitz, Jr

David E Mayhew

Aaron John Nygren

Mark Henry Oskin

Ross Voigt La Fetra

Niti Madan

Divya Madapusi Srinivas Prasad

Georgios Mappouras

Prashant Jayaprakash Nair

A memory device includes memory cells. A memory cell of the memory cells includes gate circuitry, a first capacitor, and a second capacitor. The gate circuitry is connected to a wordline and a bitline. The first capacitor is connected to the gate circuitry and a first drive line. The second capacitor is connected to the gate circuitry and a second drive line.

Ferroelectric random-access memory with enhanced lifetime, density, and performance

An apparatus and method for performing memory operations in memory stacks comprising receiving a memory operation request at a first memory controller, where the first memory controller is in included in a first logic die in communication with a first memory die of a first memory technology, from a processor via a first bus. The method further comprising, on a condition that the memory operation request is associated with a second memory technology, communicating the memory operation request to a second memory controller via a side bus, where the second memory controller is included in a second logic die in communication with a second memory die of the second memory technology, and, on a condition that the memory operation request is associated with the first memory technology, performing the memory operation request. The first and second logic dies and the first and second memory dies being stacked on the processor.

Method and apparatus of integrating memory stacks

A memory device includes a memory circuitry includes a first transmission grate, a first capacitor, a second transmission gate, and a second capacitor. The first transmission gate includes a first transistor connected between a first node and a second node. The first transistor having a gate terminal connected to a first clock node. The first clock node configured to receive a first clock signal. The first capacitor is connected between the second node and a first voltage node. The first capacitor is a ferroelectric capacitor. The second transmission gate includes a second transistor connected between the second node and a third node. The second transistor has a gate terminal connected to the first clock node. The second capacitor is connected between the third node and a second voltage node.

Register, flop, and latch designs inlcuding ferroelectric and linear dielectrics

An accelerator device includes a first processing unit to access a structure of a graph dataset, and a second processing unit coupled with the first processing unit to perform computations based on data values in the graph dataset.

Flexible, scalable graph-processing accelerator

A memory sprint controller, responsive to an indicator of an irregular memory access phase, causes a memory controller to enter a sprint mode in which it temporarily adjusts at least one timing parameter of a dynamic random access memory (DRAM) to reduce a time in which a designated number of activate (ACT) commands are allowed to be dispatched to the DRAM.

Memory sprinting

A processing device including a plurality of clusters of processor cores and a method for use in the processing device is disclosed. Each processor core in a cluster of processor cores is in communication with the other processor cores in the cluster and at least one processor core of each cluster is in communication with at least a processor core of a different cluster of processor cores. Each processor core is configured to store a product of a portion of a first matrix and a first portion of a second matrix in the memory, and store a product of the portion of the first matrix and a second portion of the second matrix in the memory, where the second portion of the second matrix is received from a processor core in the cluster of processor cores.

Device and method for accelerating matrix multiply operations

A memory module includes one or more programmable ECC engines that may be programed by a host processing element with a particular ECC implementation. As used herein, the term 'ECC implementation' refers to ECC functionality for performing error detection and subsequent processing, for example using the results of the error detection to perform error correction and to encode corrupted data that cannot be corrected, etc. The approach allows an SoC designer or company to program and reprogram ECC engines in memory modules in a secure manner without having to disclose the particular ECC implementations used by the ECC engines to memory vendors or third parties.

Error detection and correction in memory modules using programmable ECC engines

A method includes, in response to a memory error indication indicating an uncorrectable error in a faulted segment, associating in a remapping table the faulted segment with a patch segment in a patch memory region, and in response to receiving from a processor a memory access request directed to the faulted segment, servicing the memory access request from the patch segment by performing the requested memory access at the patch segment based on a patch segment address identifying the location of the patch segment. The patch segment address is determined from the remapping table and corresponds to a requested memory address specified by the memory access request.

Method for a reliability, availability, and serviceability-conscious huge page support

A processing device is provided which comprises memory configured to store data and a plurality of processor cores in communication with each other via first and second hierarchical communication links. Processor cores of a first hierarchical processor core group are in communication with each other via the first hierarchical communication links and are configured to store, in the memory, a sub-portion of data of a first matrix and a sub-portion of data of a second matrix. The processor cores are also configured to determine a product of the sub-portion of data of the first matrix and the sub-portion of data of the second matrix, receive, from another processor core, another sub-portion of data of the second matrix and determine a product of the sub-portion of data of the first matrix and the other sub-portion of data of the second matrix.

A method and apparatus of integrating memory stacks includes providing a first memory die of a first memory technology and a second memory die of a second memory technology. A first logic die is in communication with the first memory die of the first memory technology, and includes a first memory controller including a first memory control function for interpreting requests in accordance with a first protocol for the first memory technology. A second logic die is in communication with the second memory die of the second memory technology and includes a second memory controller including a second memory control function for interpreting requests in accordance with a second protocol for the second memory technology. A memory operation request is received at the first or second memory controller, and the memory operation request is performed in accordance with the associated first memory protocol or the second memory protocol.

Memory management circuitry and processes operate to improve reliability of a group of memory stacks, providing that if a memory stack or a portion thereof fails during the product's lifetime, the system may still recover with no errors or data loss. A front-end controller receives a block of data requested to be written to memory, divides the block into sub-blocks, and creates a new redundant reliability sub-block. The sub-blocks are then written to different memory stacks. When reading data from the memory stacks, the front-end controller detects errors indicating a failure within one of the memory stacks, and recovers corrected data using the reliability sub-block. The front-end controller may monitor errors for signs of a stack failure and disable the failed stack.

Tolerating memory stack failures in multi-stack systems

Providing host-based error detection capabilities in a remote execution device is disclosed. A remote execution device performs a host-offloaded operation that modifies a block of data stored in memory. Metadata is generated locally for the modified of block of data such that the local metadata generation emulates host-based metadata generation. Stored metadata for the block of data is updated with the locally generated metadata for the modified portion of the block of data. When the host performs an integrity check on the modified block of data using the updated metadata, the host does not distinguish between metadata generated by the host and metadata generated in the remote execution device.

Providing host-based error detection capabilities in a remote execution device

A method includes reserving memory capacity in a first memory device as patch memory region for backing faulted memory, receiving a memory error indication indicating an uncorrectable error in a faulted segment in a second memory device and, in response to the memory error indication, associating in a remapping table the faulted segment with a patch segment in the patch memory region. The faulted segment is smaller than a memory page size of the second memory device. The method also includes, in response to receiving a memory access request directed to the faulted memory segment, servicing the memory access request from the patch segment by querying the remapping table to determine a patch segment address corresponding to a requested memory address, where the patch segment address identifies the location of the patch segment, and based on the patch segment address, performing the requested memory access at the patch segment.

Growing community of inventors

Austin, TX, United States of America

Michael Ignatowski