Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Michael Huber

Karl Engl

Simon Jerebic

Markus Maute

Sebastian Taeger

Markus Broell

Mathias Kaempf

Guenter Spath

Ingo Neudecker

Johann Eibl

Georg Hartung

Korbinian Perzlmaier

Wolfgang Schmid

Lutz Höppel

Franz Eberhard

Ivar Tangring

Lorenzo Zini

Albrecht Kieslich

Robert Walter

Stefanie Rammelsberger

Christian Rumbolz

Bernd Boehm

Georg Rossbach

Rainer Hartmann

Martin Welzel

Benjamin Michaelis

Sebastian Hoibl

Jana Sommerfeld

Martin Herz

An optoelectronic semiconductor device may include a first and a second semiconductor layer having a first and a second conductivity type. The optoelectronic semiconductor device may include a first contact layer in direct contact with the first semiconductor layer, a first insulating layer formed over the semiconductor layers, and a second current spreading structure electrically connected to the second semiconductor layer. A maximum lateral extension of the second semiconductor layer is greater than a maximum lateral extension of the first semiconductor layer, such that a step structure is formed, and the first insulating layer is formed as a conformal layer over the step structure. A second insulating layer may be arranged between a horizontal surface of the first contact layer and the second current spreading structure. The thickness of the second insulating layer is smaller than the smallest thickness of the first insulating layer over the step structure.

Optoelectronic semiconductor device comprising an insulating layer and method of manufacturing the optoelectronic semiconductor device

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer

The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body () having a radiation-permeable surface (), and introducing structures () into the semiconductor body () on the radiation-permeable surface (), wherein the structures () are quasi-regular.

Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface

According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.

Method for producing a plurality of semiconductor chips and semiconductor chip

Disclosed is a radiation-emitting semi-conductor chip () comprising an epitaxial semi-conductor layer sequence () which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence () is applied on a a transparent substrate (), wherein the substrate () has a first main surface () facing the semi-conductor layer sequence (), a second main surface () facing away from the semi-conductor layer sequence () and a first lateral flank () arranged between the first main surface () and the second main surface (), and the lateral flank () has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips and optoelectronic component having a radiation-emitting semiconductor chip

The invention relates to an optoelectronic semiconductor chip () comprising a carrier () and a semiconductor body () having an active layer () provided for generating electromagnetic radiation. Said carrier () has a first main surface (A) facing the semiconductor body, a second main surface (B) facing away from the semiconductor body, and a sidewall (C) arranged between the first main surface and the second main surface. The carrier () has a structured region (C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component () comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Optoelectronic semiconductor chip, optoelectronic component and method for singulating semiconductor chips

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production

A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating reactive oxygen groups and/or reactive hydroxyl groups on the surface, and depositing a passivation layer by atomic layer deposition on the surface.

Method of encapsulating an optoelectronic device and light-emitting diode chip

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Bad Abbach, Germany

Michael Huber