Aixtron Ag

Siphoton Inc.

Aixtron, Inc.

Michael Heuken

Shaoher X Pan

Justin Allen Payne

Jay Chieh Chen

Holger Jürgensen

Gerhard Karl Strauch

Johannes Kaeppeler

Gerd Strauch

Oliver Schön

Dietmar Schmitz

Bernd Wachtendorf

Gert Strauch

Bernd Schottker

Harry Protzmann

Rainer Beccard

Klaus Heime

A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

Non-polar semiconductor light emission devices

A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

Semi-polar semiconductor light emission devices

What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form ABCNMwherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.

Method of growing nitrogenous semiconductor crystal materials

What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form ABCNM, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.

Method and system for semiconductor crystal production with temperature management

The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH, AsHor PHinto the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.

Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates

The invention relates to a device comprising a process chamber which is arranged in a reaction housing and which can be heated especially by supplying heat to a substrate holder, comprising a gas inlet for the admission of gaseous starting material, whereby the decomposition products thereof are deposited on a substrate maintained by a substrate holder to form a layer, also comprising at least one sensor acting upon the inside of the process chamber for determining layer properties further comprising an electronic control unit for controlling the heating of the process chamber, mass controllers for controlling the flow of the starting materials and a pump for controlling the pressure of the process chamber, characterized in that the electronic control unit forms modified process parameters from deviation values obtained upon growth of the calibrating layer with the aid of stored calibrating parameters, thereby controlling the heating of the process chamber, the flow controllers and the pump upon growth of the active layer sequence.

Method and device for depositing layers

Disclosed is a process for producing p-type doped layers, in particular, in II-VI semiconductors, in which the p-type doped layer is produced in a CVD-step by means of plasma activation of nitrogenated gases.

Growing community of inventors

Aachen, Germany

Michael Heuken