Qualcomm Incorporated

Michael Hawjing Lo

Jungwon Suh

Dexter Tamio Chun

Yanru Li

Shyamkumar Thoziyoor

Laurent Rene Moll

Pankaj Deshmukh

Olivier Alavoine

Xavier Loic Leloup

Ravindra Kumar

Stephen A Molloy

Subbarao Palacharla

Tauseef Kazi

Jeffrey Gemar

Boris Andreev

Vinod Chamarty

Aravind Bhaskara

Simon Booth

Tao Shen

Edoardo Regini

Renatas Jakushokas

Wenbiao Wang

Sejoong Lee

Saurabh Patodia

This disclosure provides systems, methods, and devices for memory systems that support metadata. In a first aspect, a method of handling data and metadata at a memory device includes receiving data from the host via the at least one data connection into the first plurality of registers; receiving metadata from the host via the at least one non-data connection into the second plurality of registers; storing the data in the first portion of the memory array; and storing the metadata in the second portion of the memory array. Other aspects and features are also claimed and described.

Metadata registers for a memory device

Methods and apparatuses for improve data clock to reduce power consumption are presented. The apparatus includes a memory configured to receive a data clock from a host via a link and to synchronize the data clock with the host. The memory includes a clock tree buffer configured to toggle based on the data clock to capture write data or to output read data and a command decoder configured to detect a data clock suspend command while the data clock is synchronized between the host and the memory. The clock tree buffer is configured to disable toggling based on the data clock in response to the command decoder detecting the data clock suspend command. the host includes a memory controller configured to provide a data clock suspend command to the memory via the link while the data clock is synchronized between the host and the memory.

Enhanced data clock operations in memory

In a conventional memory subsystem, a memory controller issues explicit refresh commands to a DRAM memory device to maintain integrity of the data stored in the memory device when the memory device is in an auto-refresh mode. A significant amount of power may be consumed to carry out the refresh. To address this and other issues, it is proposed to allow a partial refresh in the auto-refresh mode in which the refreshing operation may be skipped for a subset of the memory cells. Through such selective refresh skipping, the power consumed for auto-refreshes may be reduced. Operating system kernels and memory drivers may be configured to determine areas of memory for which the refreshing operation can be skipped.

Partial refresh technique to save memory refresh power

Methods and apparatuses for a system error-correcting code function are presented. The apparatus includes a memory configured to communicate with a host. The memory includes a memory array configured to store data. The memory is configured to provide the data stored in the memory array to the host in performing computing functions and configured to provide an error-correction code (ECC) associated with the data to the host. The ECC is not stored in the memory array in a first configuration of the memory and is stored in the memory array in a second configuration of the memory.

Memory with system ECC

Dynamic random access memory (DRAM) data may be accessed by a memory controller using a broadcast mode or a non-broadcast mode. In the broadcast mode, a first portion of data that is the subject of an access request and a second portion of the data that is the subject of the access request may be accessed concurrently via first and second pseudo-channels, respectively. In the non-broadcast mode, data that is the subject of the access request may be accessed via a selected one of the first and second pseudo-channels.

Adaptive memory access management

Methods and apparatuses for to memories using dynamic voltage scaling are presented. The apparatus includes memory configured to communicate with a host. The memory includes a peripheral portion and a memory array. The memory is further configured to receive, from at least one power management circuit, a first supply voltage and a second supply voltage. The memory further includes a switch circuit. The switch circuit is configured to selectively provide the first supply voltage and the second supply voltage to the peripheral portion. The first supply voltage is static and has a first voltage range. The second supply voltage has a low second voltage range and a high second voltage range.

Memory with dynamic voltage scaling

Power saving techniques for memory systems are disclosed. In particular, exemplary aspects of the present disclosure contemplate taking advantage of patterns that may exist within memory elements and eliminating duplicative data transfers. Specifically, if data is repetitive, instead of sending the same data repeatedly, the data may be sent only a single time with instructions that cause the data to be replicated at a receiving end to restore the data to its original repeated state.

Power saving techniques for memory systems by consolidating data in data lanes of a memory bus

Various aspects include methods for managing memory subsystems on a computing device. Various aspect methods may include determining a period of time to force a memory subsystem on the computing device into a low power mode, inhibiting memory access requests to the memory subsystem during the determined period of time, forcing the memory subsystem into the low power mode for the determined period of time, and executing the memory access requests to the memory subsystem inhibited during the determined period of time in response to expiration of the determined period of time.

Forced idling of memory subsystems

Growing community of inventors

San Diego, CA, United States of America

Michael Hawjing Lo