Applied Materials, Inc.

Michael Haverty

Bhaskar Jyoti Bhuyan

Lakmal Charidu Kalutarage

Li-Qun Xia

Mark Joseph Saly

Feng Quan Liu

Bo Xie

Yijun Liu

Ruitong Xiong

Aaron Dangerfield

Muthukumar Kaliappan

Shruba Gangopadhyay

Rui Lu

Xiaobo Li

Lauren Bagby

Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Systems and methods for depositing low-K dielectric films

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

Methods for depositing blocking layers on conductive surfaces

Growing community of inventors

Mountain View, CA, United States of America

Michael Haverty