California Institute of Technology

The United States of America As Represented by the Administrator of the

Michael H Hecht

Ara N Chutjian

Otto J Orient

Reid Alyn Brennen

Dean V Wiberg

Frank J Grunthaner

Michael E Hoenk

William J Kaiser

Shouleh Nikzad

Martin G Buehler

Paula J Grunthaner

Thomas R Van Zandt

Lloyd Douglas Bell

L Douglas Bell

Robert W Terhune

Roland E Stalder

The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.

Delta-doped CCD's as low-energy particle detectors and imagers

The present invention provides a quadrupole mass spectrometer and an ion filter for use in the quadrupole mass spectrometer. The ion filter includes a thin patterned layer including a two-dimensional array of poles forming one or more quadrupoles. The patterned layer design permits the use of very short poles and with a very dense spacing of the poles, so that the ion filter may be made very small. Also provided is a method for making the ion filter and the quadrupole mass spectrometer. The method involves forming the patterned layer of the ion filter in such a way that as the poles of the patterned layer are formed, they have the relative positioning and alignment for use in a final quadrupole mass spectrometer device.

Miniature micromachined quadrupole mass spectrometer array and method of making the same

The present invention provides a quadrupole mass spectrometer and an ion filter for use in the quadrupole mass spectrometer. The ion filter includes a thin patterned layer including a two-dimensional array of poles forming one or more quadrupoles. The patterned layer design permits the use of very short poles and with a very dense spacing of the poles, so that the ion filter may be made very small. Also provided is a method for making the ion filter and the quadrupole mass spectrometer. The method involves forming the patterned layer of the ion filter in such a way that as the poles of the patterned layer are formed, they have the relative positioning and aligrnent for use in a final quadrupole mass spectrometer device.

Miniature micromachined quadrupole mass spectrometer array and method of

Gas pressure in a chamber is determined by injecting alpha particles. The alpha particles ionize the gas. By determining a number of gas ions which are ionized, the pressure of the gas in the chamber can be determined.

Alpha-particle gas-pressure sensor

The present invention provides a minature quadrupole mass spectrometer array for the separation of ions, comprising a first pair of parallel, planar, nonmagnetic conducting rods each having an axis of symmetry, a second pair of planar, nonmagnetic conducting rods each having an axis of symmetry parallel to said first pair of rods and disposed such that a line perpendicular to each of said first axes of symmetry and a line perpendicular to each of said second axes of symmetry bisect each other and form a generally 90 degree angle. A nonconductive top positioning plate is positioned generally perpendicular to the first and second pairs of rods and has an aperture for ion entrance along an axis equidistant from each axis of symmetry of each of the parallel rods, a nonconductive bottom positioning plate is generally parallel to the top positioning plate and has an aperture for ion exit centered on an axis equidistant from each axis of symmetry of each of the parallel rods, means for maintaining a direct current voltage between the first and second pairs of rods, and means for applying a radio frequency voltage to the first and second pairs of rods.

Miniature quadrupole mass spectrometer array

An energy filter for charged particles includes a stack of micro-machined wafers including plural apertures passing through the stack of wafers, focusing electrodes bounding charged particle paths through the apertures, an entrance orifice to each of the plural apertures and an exit orifice from each of the plural apertures and apparatus for biasing the focusing electrodes with an electrostatic potential corresponding to an energy pass band of the filter.

Array of micro-machined mass energy micro-filters for charged particles

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term 'in situ' herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Method for fabricating semiconductor devices

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet

A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation.

Growing community of inventors

Los Angeles, CA, United States of America

Michael H Hecht