Dow Corning Corporation

Hemlock Semiconductor Corporation

Michael H Greene

Kimmai Thi Nguyen

Arvid Neil Arvidson

James R McCormick

Robert G Brink

Norman H Deitering

The present invention relates to a method for the purification of tetrachlorosilane used for the manufacture of electronic grade silicon and, more particularly, to a method for removing trace impurities of phosphorus. The method involves contacting liquid tetrachlorosilane with activated charcoal. The process is effective in reducing the phosphorus levels in the tetrachlorosilane to the parts per trillion range. The process can be run as a continuous or batch process with easy separation of the activated charcoal. containing the phosphorus contaminate from the tetrachlorosilane.

Phosphorous removal from tetrachlorosilane

An improvement in a process for the production of semiconductor materials from the vapor decomposition of a precursor compound of the desired semiconductor material and the deposition of the desired semiconductor material. The improvement comprises the heating of the exterior surface of a metallic enclosure of a reactor to facilitate preheating thin rods of the semiconductor material, the rods supplying the heat for decomposition and acting as a substrate for deposition, to a temperature of about 250.degree. C. to render the thin rods conductive enough to effectively pass an electric current.

Process for the production of semiconductor materials

Growing community of inventors

Midland, MI, United States of America

Michael H Greene