Robert Boschgmbh

Michael Guenther

Michele Hirsch

Friederike Lindner

Georg Hejtmann

Stefan Henneck

Martin Rittner

Michael Guyenot

Rainer Holz

Thomas Kalich

Franz Wetzl

Walter Daves

Christiane Frueh

Andreas Fix

Reinhold Melcher

Silvia Duernsteiner

Bernd Hohenberger

Thomas Herboth

Knut Alexander Kasper

Andrea Feiock

Ivan Spremo

Cosima Eschenbacher

Anja Griessl

A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge. A large-area sinter element is situated in the contact area's center region, and circular sinter elements is situated in a contact area edge region. The sinter elements may also have notches. Also described is a related device.

Method for producing structured sintered connection layers, and semiconductor element having a structured sintered connection layer

A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.

Commutation cell

Laminated composite () comprising at least one electronic substrate () and an arrangement of layers () made up of at least a first layer () of a first metal and/or a first metal alloy and of a second layer () of a second metal and/or a second metal alloy adjacent to this first layer (), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (), a region with at least one intermetallic phase () is formed between the first layer and the second layer, wherein the first layer () or the second layer () is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite () and to a circuit arrangement containing a laminated composite () according to the invention.

Laminated composite made up of an electronic substrate and a layer arrangement comprising a reaction solder

An electrically conductive contact layer () is provided with a joining material () during a method for producing a piezoelectric component (), in particular a piezoelectric sensor (). To this end, the electrically conductive contact layer () can be dipped into a paste that serves to form the joining material (). The contact layer () provided with the joining material () is subsequently disposed between a first piezoceramic layer () and a second piezoceramic layer (). The contact layer () is then inserted via the joining material () between the first piezoceramic layer () and the second piezoceramic layer (), wherein a pressure is applied to the first piezocermaic layer () against the second piezoceramic layer ().

Piezoelectric component and method for producing a piezoelectric component

A composite component includes a first joining partner, at least one second joining partner and a first joining layer situated between the first joining partner and the second joining partner. In addition to the first joining layer, at least one second joining layer is provided between the first and the second joining partner; and at least one intermediate layer is situated between the first and the second joining layer.

Composite component and method for producing a composite component

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Stuttgart, Germany

Michael Guenther