Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Michael Gros-Jean

Pierre Caubet

Jorge Regolini

Nicolas Casanova

Jean Michailos

A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.

Photodiode with interfacial charge control and associated process

An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

Integrated electrooptic system

The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.

Growing community of inventors

Grenoble, France

Michael Gros-Jean