Infineon Technologies Ag

Michael Goroll

Reinhard Pufall

Georg Meyer-Berg

Rainer Dudek

Gunther Mackh

Maria Heidenblut

Sergey Ananiev

Andreas Bauer

Stefan Kaiser

Kabula Mutamba

Georg Reuther

A semiconductor chip having a crack stop structure is disclosed. The crack stop structure includes one or more recesses formed in the semiconductor chip. The one or more recesses extend adjacent to and along a periphery of the semiconductor chip. The one or more recesses are filled with a metal material. The metal material has an intrinsic tensile stress at room temperature that induces compressive stress in at least a region of the periphery of the semiconductor chip.

Semiconductor chip having a crack stop structure

A semiconductor package includes a block having opposing first and second main surfaces and sides between the first and second main surfaces, and an encapsulation material at least partly covering the block. One or both of the main surfaces of the block has recessed regions. The recessed regions do not extend completely through the block from one main surface to the other main surface. The encapsulation material fills the recessed regions to form an interlocked connection between the block and the encapsulation material. Additional semiconductor package embodiments are provided.

Semiconductor package with interlocked connection

A semiconductor package includes a support substrate having opposing first and second main surfaces and sides between the first and second main surfaces, a semiconductor die attached to one of the main surfaces of the support substrate, and an encapsulation material at least partly covering the support substrate and the semiconductor die. A protrusion extends outward from a side of the support substrate and terminates in the encapsulation material. The protrusion forms an interlocked connection with the encapsulation material. The interlocked connection increases the tensile strength of the interface between the encapsulation material and the side of the support substrate with the protrusion.

Semiconductor module with interlocked connection

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Poing, Germany

Michael Goroll