Infineon Technologies Ag

Michael Glavanovics

Dethard Peters

Rudolf Zelsacher

Eric Pihet

Thomas Krotscheck

Markus Sievers

A device is provided that includes a power transistor and an overcurrent detection logic. The overcurrent detection logic has a first stable state providing a first signal level on a status output terminal and a second stable state providing a second signal level on the status output terminal. The overcurrent detection logic changes from the first stable state to the second stable state in response to detecting that a current through the power transistor exceeds a current limit. The overcurrent detection logic remains in the second state when the current through the transistor drops below the limit after exceeding the current limit.

Device including power transistor and overcurrent detection logic and method for operating a power transistor

A temperature sensor for a MOS circuit configuration is implemented as the gate of a MOS transistor and configured as a two-terminal network with a gate input and a gate output. By measuring the voltage drop across gate it is possible to determine the temperature at its location.

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Villach, Austria

Michael Glavanovics