International Business Machines Corporation

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Michael G Rosenfield

Balaram Sinharoy

Ramakrishnan Rajamony

Robert Brett Tremaine

Orran Yaakov Krieger

Hazim Shafi

Patrick Joseph Bohrer

Rajiv V Joshi

Ching-Te Kent Chuang

David Earle Seeger

Raman Gobichettipalayam Viswanathan

Stephen A Rishton

Dieter P Kern

Walter W Molzen, Jr

Porter Dean Gerber

Daniel Rosenfield

Christopher J Ashton

A data processing system includes a microprocessor having access to multiple levels of cache memories. The microprocessor executes a main thread compiled from a source code object. The system includes a processor for executing an assist thread also derived from the source code object. The assist thread includes memory reference instructions of the main thread and only those arithmetic instructions required to resolve the memory reference instructions. A scheduler configured to schedule the assist thread in conjunction with the corresponding execution thread is configured to execute the assist thread ahead of the execution thread by a determinable threshold such as the number of main processor cycles or the number of code instructions. The assist thread may execute in the main processor or in a dedicated assist processor that makes direct memory accesses to one of the lower level cache memory elements.

Assist thread for injecting cache memory in a microprocessor

An integrated circuit that may include an array such as a static random access memory (SRAM) with high threshold device array devices and in selected other devices to reduce leakage. Devices with high threshold have a thicker gate oxide or a high k dielectric gate oxide that is selected based on threshold voltage (V ) variations with gate oxide dielectric type or gate oxide thickness for the particular technology, e.g., PD SOI CMOS. High threshold devices may be used in non-core circuits, e.g., test circuits. Also, non-critical paths may be identified and a non-critical path margin identified. A thicker device threshold is selected for non-critcal path FETs based on the non-critical path margin. Non-critical path delays are re-checked. FETs are formed with the selected thicker gate oxide for any non-critical paths passing the re-check and in array FETs with non-selected FETs being formed with normal gate oxide thickness.

Reduced integrated circuit chip leakage and method of reducing leakage

A proximity effect correction method for electron beam lithography suitable for high voltages and/or very dense patterns applies both backscatter and forward scatter dose corrections. Backscatter dose corrections are determined by computing two matrices, a 'Proximity Matrix' P and a 'Fractional Density Matrix' F. The Proximity Matrix P is computed using known algorithms. The elements of the Fractional Density Matrix are the fractional shape coverage in a mesh of square cells which is superimposed on a pattern of interest. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter dose corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or by polynomial or other interpolation of the dose correction field defined by the D matrix. The D matrix also provides a basis for automatic shape fracturing for optimal proximity correction. Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor b.sub.i. These boost factors are computed in a separate and independent step which considers only forward scattering. They are combined with those resulting from the backscatter correction scheme either by simple multiplication to form the final correction factors, or by inputting them to the backscatter correction scheme as numerical weights for each shape.

Method for correcting proximity effects in electron beam lithography

A personal alert safety system (PASS) of the type carried by firefighters, rescuers, and the like. The unit attaches to the firefighters shoulder harness and is characterized by its ability to indicate audibly temperature changes in 100.degree. F. increments within the hazardous environment, as well as lack of motion by the firefighter. The activating circuit includes a horn alarm signalling both temperature changes and lack of motion, such that both the firefighter, as well as his colleagues, may be audibly apprised.

Temperature and motion sensor

A system for removing excess material from a semiconductor wafer employs an excimer laser for ablative photocomposition. A wafer is positioned on an X-Y stage that is computer controlled to position the wafer at points where the laser may be focused to remove excess material whether over alignment marks or identified contamination. The laser passes through a vacuum chamber which by generating an inward laminar flow constrains any particulate contamination resulting from the ablative photodecomposition from spreading. This material is removed by the vacuum system.

System for laser removal of excess material from a semiconductor wafer

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Ridgefield, CT, United States of America

Michael G Rosenfield