Astropower, Inc.

Michael G Mauk

Allen M Barnett

Robert B Hall

Sirisha Phanithra Gutta

Dharma Teja Varapula

Roger F Clark

Methods that integrates processing and an analysis of a sample are disclosed and include use of a testing device that integrates nucleic acid isolation, isothermal amplification and detection wherein a sample and reagents are transported through a capture/binding membrane by capillary forces and the positioning of a slidebar that supports said binding membrane. In the practice of the methods, flow control and fluid actuation are effected by the position of a slidebar of the device which makes a fluidic connection through the capture membrane situated between a reservoir of liquid on the device and an absorbing pad, and where a sequence of operations for sample loading, washing, optionally amplification, and optical detection of analytes can be done conveniently and rapidly at the point of care.

Point-of-care diagnostic methods using capillary-action microfluidic devices

A method of purifying silicon, comprising feeding a sparging gas into a liquid melt &lsqb; &rsqb; containing molten silicon and at least one impurity, in which the sparging gas is used to react with or move one or more impurity contained within the silicon. The products of such reaction or movement may be removed, e.g., by liquid-gas extraction, by liquid-liquid extraction or by liquid-solid extraction.

Method for purifying silicon

The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates.

Semiconductor device structures incorporating &ldquo;buried&rdquo; mirrors and/or &ldquo;buried&rdquo; metal electrodes and a process for their fabrication

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Newark, DE, United States of America

Michael G Mauk