Hughes Electronics Corporation

The Boeing Company

Hughes Aircraft Company

Hrl Laboratories, LLC

Other

Inphi Corporation

Barrday Inc.

Dynasep Inc.

Michael G Case

Mehran Matloubian

Gopal Raghavan

Lawrence E Larson

Carl W Pobanz

Ralph Douglas Cope

Perry A Macdonald

William W Hooper

Peter David Brewer

Andrew T Hunter

Brian Jeffrey Waibel

Thomas Jacob Hagman

Tom Peter Edward Broekaert

David B Rensch

Steven Andrew Cope

Authi Ariamuthu Narayanan

Chanh N Nguyen

John A Roth

Kim Ferrara

David J Lawrence

Jeffrey B Shealy

Kimberly Ann Ferrara

Nanette Gopez

Chanh M Nguyen

Chinkal Patel

Mary Y Chen

Andrew Galbraith

Ross Hutter

Systems and methods for improving dense gas solvent extraction of a solute and recovery of the solvent are provided. A pressure of the solvent/solute mixture obtained from an extraction chamber is increased, e.g. with a pump, thereby providing the mixture above saturation conditions. The increased pressure provides greater solubility of the solute and less solvent being vaporized in a heat exchanger. A buildup of solute in the system is reduced, thus improving system longevity. Also, process conditions of the separation process are isolated from those of the extraction process. Accordingly, the process conditions for the separating process are maintained while the process conditions of the extraction chamber vary with ambient temperature, thus saving cost and energy. This isolation also provides an ability to use, in the gas recovery cycle, a heat pump that can be used for many applications and environmental conditions while still using a conventional refrigerant.

Solvent extraction and recovery

A method for processing a composite includes consolidating a section of a continuous length of a first feedstock together with a section of a continuous length of a second feedstock to form a consolidated section. The first feedstock is made of a first composite layer that is releasably bonded to a first release layer, and the second feedstock is made of a second composite layer that is releasably bonded to a second release layer. The first release layer is then separated from the consolidated section and from a portion of the first composite layer a distance beyond an edge of the consolidated section. The first composite layer is then cut within the distance beyond the edge to release the consolidated section from the remaining continuous length of the first feedstock.

Method for processing a composite

An apparatus for splicing an elongate multi-layered workpiece includes: (a) drives and guides cooperating to drive the workpiece along a working path; (b) a cutter for severing the workpiece; (c) a layer manipulator for separating layers; (d) an applicator for applying adhesive; and (e) a deflector unit for deflecting the workpiece from the working path. The cutter effects the severing to present first and second workpiece segments. The layer manipulator effects inter-layer separation in one segment to present an interlayer zone in the one segment. A drive inserts the other segment in the interlayer zone. The layer manipulator urges the layers together to capture the other segment within the interlayer zone to establish a multi-layer structure. A drive and at least one of the workpiece deflector unit and the applicator situate the multi-layer structure adjacent to the applicator for finishing the splicing by applying adhesive to the multi-layer structure.

Apparatus and method for splicing an elongate multi-layered workpiece

A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.

Process for assembling three-dimensional systems on a chip and structure thus obtained

A bipolar high impedance element comprises a p-n diode made from a compound semiconductor, and circuitry arranged to reverse-bias the diode such that the diode conducts a nearly constant current&#x2014;thereby enabling the element to be employed as a high impedance element. The diode is preferably the base-emitter junction of a transistor made from a compound semiconductor like InP, such that an on-chip high impedance element is provided for a fabrication process such as that used for HBTs. The element is suitably employed in an active low pass filter design: the element is connected between an input signal and an op amp input, and a feedback capacitor is connected between the op amp's output and input. The resulting filter's time constant varies with the reverse-biased diode's impedance and the capacitance of the feedback capacitor.

Bipolar high impedance element

A bipolar transistor-based linearizer with programmable gain and phase response apparatus uses a splitter to separate an incoming RF signal into two equal components: in-phase (I) and quadrature (Q, ninety degrees delayed). The I signal then passes through a first bipolar variable gain amplifier (VGA) while the Q signal passes through a second bipolar VGA. After passing through the first and second VGAs, the amplified signals are combined at the output using a summer to produce a predistorted signal that drives a TWTA. The gains of each VGA are controlled using an RF power detector in conjunction with a bipolar gain/phase slope controller. Each gain can be adjusted separately to product a large range of linearization characteristics.

Bipolar transistor-based linearizer with programmable gain and phase response system

The present invention describes the method and system of applying filter synthesis technique to distributed amplifier design. The method for synthesizing a distributed amplifier comprises the steps of determining an appropriate filter design characteristic, computing inductor and capacitor values, converting the equivalent values into a distributed amplifier with response characteristics that mirror that of the chosen filter. Applying filter synthesis techniques to distributed amplifier design results in predictable amplifier response characteristics. Filter synthesis techniques are used to design filters with controllable characteristics such as gain, cut-off frequency, and roll-off slope. Depending on the desired filter characteristics, appropriate inductor and capacitor sizes can be determined. Transferring these chosen inductors and capacitors sizes to the distributed amplifier results in amplitude and phase responses that behave like a preferred embodiment or prototype filter.

Method of distributed amplifier design utilizing filter synthesis techniques

A method to design and fabricate circuits is disclosed which will permit such circuits to operate at higher frequencies. The method is particularly adapted to integrated digital circuits, and to differential sections of such circuits, but may be applied more broadly. A load on the output of an amplifying section of the circuit is designed employing a section of high impedance inductive transmission line nearest the output node, which is then connected to a section of low impedance capacitive transmission line, and then is terminated into a resistor which provides the 0 Hz load for the circuit. By reducing the effect of the resistor portion of the load, the capacitive transmission line section permits the entire load, as seen at the output of the amplifying section, to appear more ideally inductive than has previously been achieved. Due to this inductive appearance, response times are improved and the circuit is able to operate at significantly higher frequencies.

Method to increase frequency of digital circuits

A system for redistributing a television signal to a multiplicity of receiver units within a multiple dwelling unit (MDU) includes a main receiving antenna which receives a broadband television signal and a translation device that translates the broadband television signal into a different carrier frequency band. One or more broadcasting antennas, located at advantageous sites within the MDU, transmit the translated television signal along one or more walls of the MDU to be received by antennas associated with one or more individual receiver units. Each receiver unit demodulates the received television signal and provides a user-specified channel to a television set for display.

Wireless redistribution of television signals in a multiple dwelling unit

A differential nonlinear transmission line (NLTL) circuit has anti-parallel diode pairs along a balanced transmission line to generate well defined high-speed pulses with sharp positive and negative transitions from a time varying input signal. The input signal may carry an arbitrary DC bias voltage component that is suitable for digital logic circuits, such as current mode logic (CML) employing differential inputs.

Differential nonlinear transmission line circuit

A high-voltage bipolar transistor and fabrication method that comprises a shield electrode (or field-termination electrode) located between bond pads and underlying semiconductor material. The shield electrode is sandwiched between two isolating dielectric layers. High-voltage applied to the bond pad establishes an electric field between the bond pad and the shield electrode), preventing field penetration into and inversion of the underlying semiconductor material. Using this overlapping field-termination structure, low leakage current and high breakdown voltage is maintained in the transistor. The present overlapping field-termination structure provides an effective field termination underneath the bond pads, and because of its overlapping design, provides for a more compact transistor.

High-voltage bipolar transistor utilizing field-terminated bond-pad

A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,&gt;100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.

Process tolerant, high-voltage, bi-level capacitance varactor diode

A monolithic microwave integrated circuit is formed by positioning a distributed, transmission-line network over a microwave-device structure. The ground plane of the transmission-line network adjoins an interconnect system of the microwave-device structure and signal lines of the transmission-line network are adapted to communicate with the microwave-device structure through orifices of the ground plane. The invention facilitates the use of low-cost silicon-based transistors in monolithic microwave integrated circuits.

Growing community of inventors

Thousand Oaks, CA, United States of America

Michael G Case