Infineon Technologies Ag

Infineon Technologies Austria Ag

Michael Fugger

Carsten Schaeffer

Hans-Joachim Schulze

Ravi Keshav Joshi

Klemens Pruegl

Frank Hille

Holger Schulze

Juergen Steinbrenner

Werner Robl

Michael Nelhiebel

Oliver Humbel

Roman Roth

Frank Umbach

Thomas Laska

Matthias Müller

Matthias Mueller

According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Semiconductor device and a method of forming the semiconductor device

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Self-organizing barrier layer disposed between a metallization layer and a semiconductor region

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Vienna, Austria

Michael Fugger