X-fab Semiconductor Foundries Ag

Melexis Gmbh

Michael Foertsch

Wolfgang Einbrodt

Horst Zimmermann

Holger Pless

Horst Zimmerman

The invention relates to a monolithically integrated vertical pin photodiode which is produced according to BiCMOS technology and comprises a planar surface facing the light and a rear face and anode connections located across p areas on a top face of the photodiode. An i-zone of the pin photodiode is formed by combining a low doped first p-epitaxial layer, which has maximum thickness and doping concentration, placed upon a particularly high doped p substrate, with a low doped second nepitaxial layer that borders the first layer, and ncathode of the pin photodiode being integrated into the second layer. The p areas delimit the second n epitaxial layer in a latent direction while another anode connecting area of the pin diode is provided on the rear face in addition to the anode connection.

Monolithically integrated vertical pin photodiode used in biCMOS technology

The invention relates to an optical fiber receiver () for optoelectronic integrated circuits (OEIC's) having an improved sensitivity and improved bandwidth. The improvements are achieved by subdividing the photodiodes into partial photodiodes (DD), whereby each partial photodiode is connected to a respective transimpedance amplifier (), and the output signals of the individual transimpedance amplifiers are added inside a summation amplifier (). The optical fiber received can be produced using different technologies: CMOS, BICMOS, BIPOLAR.

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Vienna, Austria

Michael Foertsch