University of Iowa Research Foundation

University of California

University of Missouri

Michael Flatté

David D Awschalom

Thomas F Boggess

Kimberley C Hall

Wayne H Lau

Kenan Gündogdu

Andrew David Kent

Giovanni Vignale

Fujian Wang

Markus Wohlgenannt

Michael Urbakh

Zhi Gang Yu

Nicholas Harmon

Ezekiel Johnston-Halperin

Ferran Macia Bros

Alexei Kornyshev

Michael N Leuenberger

An optoelectronic device which can read magnetically stored information, and convert it into optical light signals using organic or 'plastic' semiconductors is described. Such a device may use OLEDs, and may be termed an 'organic magneto-optic transducer' (OMOT). An OMOT device can read magnetically stored information, and convert it into optical light signals. The OMOT may provide benefits such as non-volatile storage, flexible films, reduced cost, and operation at room temperature.

Organic magnetoelectroluminescence for transduction between magnetic and optical information

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.

Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure

A device comprising: two mutually immiscible conductive liquids arranged to form an interface therebetween; a plurality of nanoparticles localised at the said interface, the said nanoparticles each having a first region formed of a semiconductor having a first bandgap, the first region being surrounded by a second region having a second bandgap, the second bandgap being larger than the first bandgap; and means for applying an electric field to the said nanoparticles and thus, through the Stark effect, altering the optical absorption or emission characteristics of the nanoparticles.

Electrically-tunable optical devices

A bipolar spin transistor is provided. In one embodiment of the present invention, the bipolar spin transistor includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type that is different from the first conductivity type and also having a spin polarization, and a third semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region. The first semiconductor region and the second semiconductor region are adjacent to each other so as to form a first charge depletion layer therebetween, the first charge depletion layer having a first side facing the first semiconductor region and an opposing second side facing the second semiconductor region. Additionally, the second semiconductor region and the third semiconductor region are adjacent to each other so as to form a second charge depletion layer therebetween, the second charge depletion layer having a first side facing the second semiconductor region and an opposing second side facing the third semiconductor region.

Bipolar spin transistors and the applications of the same

A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.

Non-magnetic semiconductor spin transistor

A method for creating a logic state for teleporting quantum information using a single photon is described. The method includes receiving a photon with an initial polarization and causing a first semiconductor crystal to have a first spin orientation. The photon interacts with the first semiconductor crystal for producing a resulting polarization dependent upon the first spin orientation. Causing the photon to interact with the first semiconductor crystal generates a maximally entangled state.

Teleportation system for electronic many-qubit states using individual photons

A unipolar spin transistor includes a semiconductor material having a first region, a second region, and a third region. The first region is adjacent to the second region so as to form a first domain between the first region and the second region, and the second region is adjacent to the third region so as to form a second domain between the second region and the third region. A first voltage is provided between the first region and the second region to cause carriers to move across the first domain from the first region to the second region. A second voltage is generated between the second region and the third region to cause the carriers move across the second domain from the second region to the third region. The second voltage has an amplitude different from that of the first voltage. The first region and the third region have a first spin polarization, and the second region has a second spin polarization which may be different from the first spin polarization.

Growing community of inventors

Iowa City, IA, United States of America

Michael Flatté