Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Osram Ag

Osram Opto Semiconductor Gmbh

Michael Fehrer

Berthold Hahn

Volker Härle

Johannes Baur

Dominik Eisert

Uwe Strauss

Stephan Kaiser

Ulrich Zehnder

Johannes Völkl

Wilhelm Stein

Andreas Ploessl

Tilman Schlenker

Stefan Bader

Andreas Plössl

Ulrich Jacob

Werner Plass

Frank Otte

Alfred Lell

Hans-Jürgen Lugauer

Franz Eberhard

Martin Müller

Uwe Strauβ

Matthias Winter

Sönke Tautz

Marianne Ortmann

Günter Schmid

Markus Heinrich Klein

Karsten Heuser

Nina Riegel

Marc Philippens

Andrew Ingle

Ralf D Krause

Michael Popp

Arvid Hunze

Raimund Oberschmid

Stefan Seidel

Frank Kühn

Egbert Höfling

Fryderyk Kozlowski

Uwe Strauß

Günter Gieres

Markus Klein

Volker HÄRLE

Frank KÜHN

In various embodiments, an optoelectronic component is provided. The optoelectronic component may include an electrode, and an organic functional layer structure formed for emitting an electromagnetic radiation or converting an electromagnetic radiation into an electric current. The electrode has a surface which is reflective with respect to the electromagnetic radiation, and wherein the organic functional layer structure is formed on or over the reflective surface of the electrode and is electrically coupled thereto. The reflective surface has a structuring.

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.

Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Method for producing a semiconductor element

An optoelectronic semiconductor chip () having a semiconductor layer sequence (), which comprises an active region () suitable for generating radiation and has a lateral main extension direction. The semiconductor layer sequence is arranged by a substrate () having a side surface (), the side surface has a side surface region () that is beveled with respect to the main extension direction, and/or a cutout (), and the semiconductor chip has a radiation-transmissive and electrically conductive contact layer ().

Optoelectronic semiconductor chip

Method for producing a semiconductor component

A radiation-emitting device with a first electrode, a first emission layer, a second emission layer and a second electrode. The invention additionally relates to a method of producing a radiation-emitting device.

Radiation emitting device and method for the production thereof

A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

Radiation-emitting semiconductor component and method for producing the semiconductor component

A semiconductor chip () comprises a semiconductor body () having a semiconductor layer sequence having an active region () provided for generating radiation. A contact () is arranged on the semiconductor body (). An injection barrier () is formed between the contact () and the active region (). A method for producing a semiconductor chip is also disclosed.

Semiconductor chip and method for producing a semiconductor chip

A method for producing an electrical contact of an optoelectronic semiconductor chip (), comprising providing a mirror layer (), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer () over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer () over said protective layer; and providing a solder layer () over said layer sequence.

Method for producing an electrical contact for an optoelectronic semiconductor chip

A radiation-emitting semiconductor component having a radiation-transmissive substrate (), on the underside of which a radiation-generating layer () is arranged, in which the substrate () has inclined side areas (), in which the refractive index of the substrate () is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate () has essentially perpendicular side areas () in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

Radiation-emitting semiconductor component and method for the production thereof

A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

A radiation-emitting semiconductor chip, having a multilayer structure () containing a radiation-emitting active layer (), and having a window layer (), which is transmissive to a radiation emitted by the active layer () and is arranged downstream of the multilayer structure () in the direction of a main radiating direction of the semiconductor component. The window layer () has at least one peripheral side area (), which, in the course from a first main area () facing the multilayer structure () in the direction toward a second main area () remote from the multilayer structure (), firstly has a first side area region () which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (). A peripheral side area () of the multilayer structure () and at least a part of the beveled, curved or stepped first side area region () are coated with a continuous electrically insulating layer (). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component

A radiation-emitting semiconductor component having a semiconductor body (), which has an active zone (), in which, for the purpose of electrical contact connection, a patterned contact layer () is applied on a surface of the semiconductor body. Interspaces () are distributed over the contact layer () and are provided for the purpose of forming free areas () on the surface which are not covered by the contact layer (). The free areas () are covered with a mirror (). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

Radiation-emitting semiconductor element

A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.

Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface

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Bad Abbach, Germany

Michael Fehrer