International Business Machines Corporation

Macronix International Co., Ltd.

Jsr Corporation

Bionano Genomics, Inc.

Jrs Corporation

Elpis Technologies Inc.

Michael F Lofaro

Mahadevaiyer Krishnan

Kenneth M Davis

Joshua T Smith

Eugene John O'Sullivan

Dinesh R Koli

Eric Andrew Joseph

James Gardner Ryan

Tomohisa Konno

Fen Fen Jamin

Ernest N Levine

Tatsuya Yamanaka

Jason E Cummings

Michael A Cobb

Dinesh Kumar Penigalapati

Masahiro Noda

Donald Francis Canaperi

Nathan P Marchack

Shyng-Tsong Chen

Yann A Astier

William J Cote

Janusz Jozef Nowak

Dennis G Manzer

James Anthony Tornello

Ghavam G Shahidi

Chung H Lam

Hsiang-Lan Lung

Cyril Cabral, Jr

Timothy Joseph Dalton

Katherine Lynn Saenger

Shih-Hung Chen

Kenneth Parker Rodbell

Alejandro Gabriel Schrott

Sandra Guy Malhotra

Andrew Herbert Simon

John Michael Cotte

Matthew Joseph Breitwisch

Hiroyuki Miyazoe

Min Yang

Markus Brink

Benjamin H Wunsch

David Lee Rath

Chandrasekhar Narayan

Eric Jeffrey White

Robert L Bruce

Kaushik Arun Kumar

Huan Hu

Chao-Kun Hu

Gregory M Fritz

William Francis Landers

Nancy Anne Greco

Chieh-Fang Chen

Wei-Tsu Tseng

Judith Marie Rubino

Adam D Ticknor

Bradley Paul Jones

Steffen K Kaldor

Daniel J Solis

Sean P E Smith

Bruce Bennett Doris

Pouya Hashemi

Takashi Ando

Guy M Cohen

Josephine B Chang

Michael A Guillorn

Keith Kwong Hon Wong

Sivananda K Kanakasabapathy

Jack Oon Chu

Paul Stephen Andry

Edmund Juris Sprogis

Yun-Yu Wang

John Albrecht Ott

Richard Anthony Conti

Michael C Gaidis

Cornelia K Tsang

Anil Kumar Chinthakindi

Kenneth Jay Stein

Chao Wang

Francis R Krug, Jr

Jingwei Bai

Satyavolu S Papa Rao

Joyce C Liu

Karl E Boggs

Daewon Yang

Paul M Feeney

Shwu-Jen Jeng

Christopher M Schnabel

Thomas F Houghton

Scott Alan Estes

Michael T Brigham

Philip Murphy

Edward Jack Gordon

Michael Joseph MacDonald

Jeffery Burton Maxson

Lijuan Huang

Leonard C Stevens, Jr

James Hannah

Ronald D Fiege

Ann H McDonald

Thomas R Fisher, Jr

A memory structure is provided that avoids high resistance due to the galvanic effect. The high resistance is reduced and/or eliminated by providing a T-shaped bottom electrode structure of uniform construction (i.e., a single piece). The T-shaped bottom electrode structure includes a narrow base portion and a wider shelf portion. The shelf portion of the T-shaped bottom electrode structure has a planar topmost surface in which a MTJ pillar forms an interface with.

MRAM structure with T-shaped bottom electrode to overcome galvanic effect

The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Thin film interconnects with large grains

A method is presented for establishing a top contact to a magnetic tunnel junction (MTJ) device, the method including selectively etching, via a first etching process, an oxide layer to expose a top surface of a nitride layer of a dummy fill shape and selectively etching, via a second etching process, a top portion of the nitride layer of the dummy fill shape to expose a top surface thereof. The method further includes selectively etching, via the second etching process, the oxide layer to expose a top surface of a nitride layer of the MTJ device, and selectively etching, via the first etching process, a top portion of the nitride layer of the MTJ device to expose a top surface thereof such that a height of the MTJ device is approximately equal to a height of the dummy fill shape.

Combined CMP and RIE contact scheme for MRAM applications

A technique relates to manufacturing a nanogap. An oxide layer is disposed on top of a substrate. A release layer is disposed in a pattern on top of the oxide layer. A patterned trench is etched into the oxide layer using the pattern of the release layer. A metal layer is disposed on the release layer and in the patterned trench. A polish removes the release layer, thereby removing both the release layer and a portion of the metal layer having been disposed on top of the release layer, such that the metal layer remaining includes a first metal part and a second metal part connected by a metal nanowire. The metal layer remaining is coplanar with the oxide layer. A nanochannel is formed in the oxide layer in a region of the metal nanowire. The nanogap is formed in the metal nanowire separating the first and second metal parts.

Embedded noble metal electrodes in microfluidics

A technique relates to a nanogap array. A substrate has been anisotropically etched with trenches that have tapered sidewalls. A sacrificial layer is on bottoms and the tapered sidewalls of the trenches. A filling material is formed on top of the sacrificial layer in the trenches. Nanogaps are formed where at least a portion of the sacrificial layer has been removed from the tapered sidewalls of the trenches while the sacrificial layer remains on the bottoms of the trenches. Each of the nanogaps is formed between one tapered sidewall of the substrate and a corresponding tapered sidewall of the filling material. The one tapered sidewall of the substrate opposes the corresponding tapered sidewall. A capping layer is disposed on top of the substrate and the filling material, such that the nanogaps are covered but not filled in.

Nanogap structure for micro/nanofluidic systems formed by sacrificial sidewalls

A nanogap of controlled width in-between noble metals is produced using sidewall techniques and chemical-mechanical-polishing. Electrical connections are provided to enable current measurements across the nanogap for analytical purposes. The nanogap in-between noble metals may also be formed inside a Damascene trench. The nanogap in-between noble metals may also be inserted into a crossed slit nanopore framework. A noble metal layer on the side of the nanogap may have sub-layers serving the purpose of multiple simultaneous electrical measurements.

Nanogap in-between noble metals

A multi-generational carrier platform is configured to carry substrate carriers of different sizes depending on processing needs. Multiple carrier adaptors are provided on one side of a support plate, and substrate carriers can be distributed among the carrier adaptors to mount a maximum number of substrates under the constraint of non-overlap of the substrates and the substrate carriers. The multi-generational carrier platform can be configured to provide rotation to each substrate carrier mounted thereupon, and is compatible with chemical mechanical planarization processes that require rotation of substrates against an abrasive surface. The multi-generational carrier platform facilitates maximum utilization of a processing area provided by a tool configured to process substrates of different sizes.

Multi-generational carrier platform

An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.

Multi-spindle chemical mechanical planarization tool

Growing community of inventors

Hopewell Junction, NY, United States of America

Michael F Lofaro