Lucent Technologies Inc.

At&t Bell Laboratories

Agere Systems Guardian Corp.

Michael F Brady

John William Osenbach

Casimir R Nijander

Mindaugas Fernand Dautartas

Sailesh Mansinh Merchant

James F Dormer

Aubrey L Helms, Jr

Nagesh R Basavanhally

Hung N Nguyen

Aleksandra Yudina

John K Dorey, Ii

Michael G Palin

Rajan D Deshmukh

A method for creating attached features while controlling the depth profile between the features is presented. First the features are formed with a separating barrier between the features. The separating barrier is then etched in a second step with an orientation dependent etchant to attach the two feature. This method can be used to create attached features of relative similar sizes or attached features of disparate sizes.

Forming attached features on a semiconductor substrate

The invention is a method for protecting an aluminum layer from corrosion when it is formed by means of a photoresist mask on the same substrate as a multilayer such as titanium, platinum, and gold. A protection layer such as titanium is formed over the aluminum layer prior to stripping the photoresist mask, and is removed subsequent to stripping and prior to bonding components to the aluminum layer.

Corrosion protection in the fabrication of optoelectronic assemblies

The invention is a method and resulting device which provides a strong bond between a silicon substrate and an oxide component mounted within a cavity in the substrate. A layer of titanium, for example, is deposited on the walls of the cavity, followed by deposition of a layer of aluminum. The structure is preferably annealed to form titanium silicide and titanium-aluminum interface layers. The component is then bonded to the aluminum layer.

Bonding of aluminum oxide components to silicon substrates

Compliant, resilient mounting means are provided for minimizing stress on the platform of an optical sub-assembly package caused by temperature change and the like so as to maintain good alignment between the laser beam emitted from a laser chip mounted on the platform and the lens of an optical fiber also mounted on the platform. The resilient means comprise resilient solder bumps of the order of 625 microns thick interposed between the platform and the base to provide a resilient connection between the platform and the base, thereby maintaining good alignment between the laser beam and the lens by reducing the stresses on the optical sub-assembly platform that tend to be caused by temperature changes or the mounting of the package to a rigid, external platform, as by bolting.

Optical sub-assembly package mount

Bonding of aluminum oxide components to silicons substrates

A method and apparatus measures a deviation in alignment between two components of a product wherein each component is characterized by a respective pattern and wherein each pattern comprises respective elements. The centroid of each element in each respective pattern is indicated, and based on the centroid indications, the center of each respective pattern is indicated. The deviation in alignment between the two components is determined as a function of the indicated position of the centers of the respective patterns, and positioning of the components is controlled as a function of the indicated position of the centers of the respective patterns.

Method and apparatus for fabricating products using alignment measuring

A solder self-alignment process for aligning a semiconductor chip (13) with, and bonding the chip to, a substrate (12) is preformed in an atmosphere rich in gaseous formic acid, at least during the melting step. It is preferred that the formic acid atmosphere be maintained during the self-alignment step and the step of cooling and hardening the solder elements (23). With this feature, one can completely avoid the use of any solid or liquid fluxes and avoid the consequences of such use. Nonetheless, the molten solder elements (23) dependably bond to the bonding surfaces and vertically align themselves.

Solder self-alignment methods

An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi.sub.0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.

Thin coatings for use in semiconductor integrated circuits and processes

An antireflection coating (21) for use in integrated circuit processing consists of a film of x-silicon-nitride, where x is a metal from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten. These coatings are preferably made by sputtering, with the x silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.

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Morrisville, PA, United States of America

Michael F Brady