Asm IP Holding B.v.

Michael Eugene Givens

Andrea Illiberi

Shaoren Deng

Suvi P Haukka

Jan Willem Maes

Eva E Tois

Charles Dezelah

Delphine Longrie

Giuseppe Alessio Verni

VamsI Paruchuri

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Selective passivation and selective deposition

Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.

Selective deposition of metal oxides on metal surfaces

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Helsinki, Finland

Michael Eugene Givens