Infineon Technologies Ag

Infineon Technologies Austria Ag

Michael Ehmann

Evelyn Napetschnig

Kamil Karlovsky

Werner Robl

Stefan Woehlert

Tobias Schmidt

Mark Harrison

Paul Frank

Eric Graetz

Frank Wagner

Gretchen Adema

Anton Pugatschow

Joachim Seifert

Thomas Bertaud

Matteo Dainese

Saurabh Roy

Johanna Schlaminger

Hiroshi Narahashi

Katharina Teichmann

Sigrid Wabnig

A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Electronic device, electronic module and methods for fabricating the same

A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

Solder metallization stack and methods of formation thereof

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Villach, Austria

Michael Ehmann