Cirrus Logic Inc.

Apple Inc.

Michael E Runas

Michael R Seningen

Sudhir Sharma

Robert M Nally

Ronald T Taylor

Kirit B Patel

James S Blomgren

G R Rao

Gr Mohan Rao

A memory that may allow for the detection of weak data storage cells may include data storage cells, a column multiplexer, a sense amplifier, and a load circuit. The load circuit may include one or more capacitive loads and may be operable to controllably select one or more of the capacitive loads to couple to the input of the sense amplifier.

Memory with bit line capacitive loading

Embodiments of a memory are disclosed that may allow for the detection of weak data storage cells or may allow operation of data storage cells under conditions that may represent the effects of transistor ageing. The memory may include data storage cells, a column multiplexer, a sense amplifier, and a current injector. The current injector may be configured to generate multiple current levels and may be operable to controllably select one of the current levels to either source current to or sink current from the input of the sense amplifier.

Memory with bit line current injection

Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column multiplexer, a first sense amplifier and a second sense amplifier, and an output circuit. The gain level of the first sense amplifier may be higher than the gain level of the second sense amplifier. The output circuit may include a multiplexer and the multiplexer may be operable to controllably select one of the outputs of the first and second sense amplifiers and pass the value of the selected sense amplifier. The output circuit may include a node that couples the outputs of the first and second sense amplifiers and the outputs of the first and second sense amplifiers may be able to be set to a high impedance state.

Memory with redundant sense amplifier

Embodiments of a memory are disclosed that may reduce the likelihood of a misread while reading a weak data storage cell. The memory column may include a number of data storage cells, a column multiplexer, and a sense amplifier. The sense amplifier may have two or more gain elements which can be individually selected to adjust the gain level of the sense amplifier.

Memory with variable strength sense amplifier

Embodiments of a memory are disclosed that may allow for the detection and compensation of weak data storage cells. The memory may include data storage cells, a selection circuit, a sense amplifier, and a timing and control block. The timing and control block may be operable to controllably select differing time periods between the activation of the selection circuit and the activation of the sense amplifier.

Weak bit detection in a memory through variable development time

A scannable pulse dynamic logic gate may include an evaluation network that evaluates dynamic inputs in response to assertion of an evaluate pulse. The evaluate pulse may be generated from a clock signal such that it is shorter in duration than the clock signal. During a normal mode of operation, when the evaluate pulse is asserted, the evaluation network may discharge a dynamic node depending on the state of the dynamic inputs. The resultant state of the dynamic node may be stored within an output storage element. When the evaluate pulse is deasserted, the dynamic node may be precharged. During a scan mode of operation, the dynamic node may remain precharged. Scan data may be transferred to the output storage element under the control of scan-related control signals.

Pulse dynamic logic gates with mux-D scan functionality

A scannable pulse dynamic logic gate may include an evaluation network that evaluates dynamic inputs in response to assertion of an evaluate pulse. The evaluate pulse may be generated from a clock signal such that it is shorter in duration than the clock signal. During a normal mode of operation, when the evaluate pulse is asserted, the evaluation network may discharge a dynamic node depending on the state of the dynamic inputs. The dynamic node may then drive output device(s). When the evaluate pulse is deasserted, the dynamic node may be precharged. The gate may also include scan input devices, which, during a scan mode of operation, may load scan input data onto the output node in response to assertion of a scan master clock. A storage element of the gate may receive and capture a value of the output node in response to assertion of a slave scan clock.

Pulse dynamic logic gates with LSSD scan functionality

A system and method for reducing power consumption within clock distribution on a semiconductor chip. A 4-phase clock generator within a clock distribution network provides 4 non-overlapping clock signals dependent upon a received input clock. A reduced voltage swing clock generator receives the non-overlapping clock signals and charges and discharges a second set of clock lines in a manner sequenced by the non-overlapping clock signals. The sequencing prevents a voltage range from reaching a magnitude equal to a power supply voltage for each of the second set of clock lines. In one embodiment, the magnitude reaches half of the power supply voltage. The reduced voltage swing latch receives the second set of clock lines. The reduced voltage swing latch updates and maintains logical state based at least upon the received second set of clock lines.

Reduced voltage swing clock distribution

This disclosure describes an invention that is a basic charge recycling gatethat includes a precharge node, a output charging network, an output pre-charge and null propagate network, an evaluation network, a first time varying power supply TVS, a second time varying power supply TVS, and a keeper circuit. Additionally, this disclosure describes an invention that is a time varying power supplythat includes a resonator circuit, an amplitude and power check circuit, one or more overshoot and an undershoot voltage clampsand, exciter circuitsand, and current monitor circuitsand. In addition, the invention includes frequency self tuning with the amplitude and power check circuit, capacitor banksand, and the inductor tap select controller. Amplitude self tuning is provided by the amplitude sample and compare circuit. Further, a phase shift control circuitryis also provided. And, distributed control switching circuitryfor power management is also provided.

Charge recycling a 1 of N NDL gate with a time varying power supply

A display controller 104 for use with a display device 107 operable to display images on a screen. Display controller 104 includes circuitry 201-210 for presenting first data to the display device 107 for generating an image in a first areas of the screen, the first data being retrieved from an external frame buffer 108. A display controller 104 further includes circuitry 205, 210 for presenting second data to the display device 107 for generating an image in the second area of the screen, the second data being retrieved from an internal frame buffer 206.

Display controller with integrated half frame buffer and systems and

A memory system 104 includes an array 200 of memory cells arranged in rows and columns. Circuitry 208 is included for selectively performing logic operations on a bit of data stored in a selected cell using a bit of received modifying data and mode data bit for selecting a logic operation for performance. Circuitry 208 for performing logic operations is operable during an AND logic operation to write data into the cell when the bit of modifying data is a logic zero and maintaining an existing bit stored in the cell when the bit of modifying data is a logic one. Also included is circuitry 207, 210 for receiving and latching the mode data bit and the modifying data through a single port.

Circuits, systems and methods for modifying data stored in a memory

A memory system 104 includes an array 200 of memory calls arranged in rows and columns and circuitry 208 for selectively performing logic operations on a bit of data stored in a selected call using a bit of received modifying data and a mode data bit for selecting a logic operation for performance. Circuitry 208 for modifying during an OR logic operation writing bit of the modifying data into the cell when the bit of modifying data is a logic one and maintaining an existing bit stored in call when the bit of modifying data is a logic zero. Memory system 104 further includes circuitry 207, 210 for receiving and latching the mode data and the modifying data through a single port.

Growing community of inventors

McKinney, TX, United States of America

Michael E Runas