Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

The Dow Chemical Company

Toyobo Co., Ltd.

Dupont Electronics, Inc.

Michael E Mills

James Keenihan

Narayan Ramesh

Joseph A Langmaid

Kevin D Maak

Jason A Reese

Timothy L Faley

Leonardo C Lopez

Ryan S Gaston

Yoshihiko Teramoto

Zenon Lysenko

Duane R Romer

Bainian Qian

James P Godschalx

Chieh-Chun Chau

Robert M Blomquist

Kancharla-Arun Kumar Reddy

Bradley K Taylor

James C Stevens

Lee Melbourne Cook

Shaoguang Feng

John Michael Maher

Paul Joseph Popa

Marty W DeGroot

Sudhakar Balijepalli

Julia Kozhukh

Mary Anne Leugers

George J Quarderer, Jr

Larry R Wilson

Robert A Devries

Paul R Elowe

Paul H Townsend, Iii

Teresa Brugarolas Brufau

Ying Hung So

Matthew R Gadinski

Gary R Buske

Kazuyuki Yabuki

Kiran K Baikerikar

Laura A Grier

Todd R Bryden

Steven J Martin

Nan-Rong Chiou

Myrna Serrano

Katsuya Tani

Abhijit A Namjoshi

Samar R Teli

Keith L Kauffmann

Bryan E Barton

Marty W Degroot

Masaru Nakagawa

Lyla M El-Sayed

Shijing Xia

Dale J Aldrich

Jack E Hetzner

Mauricio E Guzman

Richard J Strittmatter

Timothy Plum

Rebekah K Feist

Dennis W Smith, Jr

Timothy J Rehg

Ira M Thumma

Kirk R Thompson

Lindsey A Clark

Nestor A Vasquez

Jeffrey L Fenton, Jr

Ravi B Shanker

David J Parrillo

David J Perkon

Douglas E Turek

Gary E Mitchell

Ihachiro Iba

Willard Alexander

Zhan Liu

Annette M Crevasse

Vere O Archibald

Minoru Sakuma

Dustin M Charamut

Matt A Stempki

Kevin P Capaldo

James R Keenihan

Matt Stempki

Timothy C Plum

A chemical mechanical polishing pad comprising a substantially non-porous polishing layer, the polishing layer comprising a polymer matrix and agglomerates of polymer particles embedded in the polymer matrix wherein the polymer particles are present in amounts of 5 to 35 weight percent based on weight of the polishing layer, the agglomerates have a size of greater than 1 μm, the polymer particles have a tensile modulus higher than a tensile modulus of the polymer matrix. The polishing layer viscoelastic and has a GEL of greater than 1000 Pa. Polishing a metal/insulator composite with such a pad can result in low amounts of dishing of the metal feature.

Composite pad for chemical mechanical polishing

The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is a photopolymerizable composition containing a block copolymer, a UV curable acrylate, and a photoinitiator.

Chemical mechanical polishing pad and preparation thereof

The present invention provides CMP polishing pads or layers having a Shore DO (15 second) hardness of from 40 to 80 made from a two-component reaction mixture of (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 15 to 36 wt. %, based on the total weight of the liquid polyol component, of one or more small chain difunctional polyols having from 2 to 6 carbon atoms, c) from 0 to 25 wt. %, based on the total weight of the liquid polyol component, of a liquid aromatic diamine which is a liquid at standard pressure and at 40° C., and d) an amount of water or CO-amine adduct sufficient to reduce the density of a CMP polishing pad made from the two-component reaction mixture to from 0.2 to 0.50 g/mL, wherein the reaction mixture comprises 60 to 75 wt. % of hard segment materials, based on the total weight of the reaction mixture.

Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith

The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is prepared by extruding a compounded photopolymerizable composition followed by exposure to UV light.

A polishing pad useful in chemical mechanical polishing comprising a polishing portion having a top polishing surface and comprising a polishing material an opening through the polishing pad, and a transparent window within the opening in the polishing pad, the transparent window being secured to the polishing pad and being transparent to at least one of magnetic and optical signals, the transparent window having a thickness and a top surface having a plurality of elements separated by interconnected recesses to provide a pattern in the top surface that includes recesses for improved deflection into a cavity in the polishing pad during polishing.

CMP polishing pad with uniform window

A two component composition for making chemical mechanical polishing pad for polishing a semiconductor substrate is provided comprising a liquid aromatic isocyanate component having an unreacted isocyanate (NCO) concentration of from 15 to 40 wt. %, based on the total solids weight of the aromatic isocyanate component, such as methylene di(phenylisocyanate) (MDI), a liquid polyol component of a polyol having a polyether backbone and having from 5 to 7 hydroxyl groups per molecule, and a curative of one or more polyamine or diamine, wherein the reaction mixture comprises 50 to 65 wt. % of hard segment materials, based on the total weight of the reaction mixture. The composition when mixed cured to form a polyurethane reaction product. Also provided are CMP polishing pads made from the polyurethane reaction product by spraying the composition into a mold.

Formulations for chemical mechanical polishing pads and CMP pads made therewith

The present invention provides methods for chemical mechanical polishing (CMP polishing) spin coated organic polymer films on a semiconductor wafer or substrate as part of lithography or as part of electronic packaging. The methods comprising spin coating an organic polymer liquid on a semiconductor wafer or substrate; at least partially curing the spin coating to form an organic polymer film; and, CMP polishing the organic polymer film with a polishing pad and an aqueous CMP polishing composition having a pH ranging from 1.5 to 4.5 and comprising elongated, bent or nodular silica particles containing one or more cationic nitrogen or phosphorus atoms, from 0.005 to 0.5 wt. %, based on total CMP polishing composition solids, of a sulfate group containing Cto Calkyl or alkenyl group surfactant, and a pH adjusting agent.

Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films

The present invention is premised upon an improved photovoltaic device ('PV device'), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

Photovoltaic device

The present invention is premised upon a connector and electronic circuit assembly () at least partially encased in a polymeric frame (). The assembly including at least: a connector housing (); at least one electrical connector (); at least one electronic circuit component (); and at least one barrier element ().

Connector and electronic circuit assembly for improved wet insulation resistance

The present invention is premised upon an assembly including at least a photovoltaic sheathing element capable of being affixed on a building structure, the sheathing element including at least: a photovoltaic cell assembly, a body portion attached to one or more portions of the photovoltaic cell assembly; at least a first and a second connector assembly disposed on opposing sides of the sheathing element and capable of directly or indirectly electrically connecting the photovoltaic cell assembly to at least two adjoining devices that are affixed to the building structure and wherein at least one of the connector assemblies includes a flexible portion; one or more connector pockets disposed in the body portion the pockets capable of receiving at least a portion of the connector assembly.

Photovoltaic sheathing element with a flexible connector assembly

The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

Method of manufacture of chalcogenide-based photovoltaic cells

The present invention is premised upon an improved photovoltaic device ('PV device'), more particularly to an improved photovoltaic device () with a multilayered photovoltaic cell assembly () and a body portion () joined at an interface region () and including an intermediate layer (), at least one interconnecting structural member (), relieving feature (), unique component geometry, or any combination thereof.

A method of manufacturing electrically interconnected solar cell assemblies, including the steps of: positioning at least a first interconnect element () in an alignment feature of a top carrier and facing a top surface of a first photovoltaic cell (); adhering the first interconnect element to a location on the top surface of the first cell, wherein a length of the first interconnect element extends beyond a trailing edge () of the first cell; and adhering a portion of the length of the first interconnect element that extends beyond a trailing edge of the first cell to the bottom surface of a second cell (). In one aspect, a system is provided for assembling solar cell strings, including cell transfer equipment, a bottom pallet including grooves, multiple top pallets including grooves, an adhesive dispensing system, a ribbon supply mechanism, and a system for moving ribbons and top pallets.

Automated assembly method for the production of interconnected thin film solar cell modules

The present invention provides strategies for improving the adhesion among two or more of transparent conducting oxides, electrically conductive grid materials, and dielectric barrier layers. As a consequence, these strategies are particularly useful in the fabrication of heterojunction photovoltaic devices such as chalcogenide-based solar cells. When the barrier is formed and then the grid is applied to vias in the barrier, the structure has improved moisture barrier resistance as compared to where the barrier is formed over or around the grid. Adhesion is improved to such a degree that grid materials and dielectric barrier materials can cooperate to provide a hermetic seal over devices to protect against damage induced by environmental conditions, including damage due to water intrusion. This allows the collection grids to be at least partially exposed above the dielectric barrier, making it easy to make electronic connection to the devices.

Moisture resistant photovoltaic devices with exposed conductive grid

Growing community of inventors

Midland, MI, United States of America

Michael E Mills