Epion Corporation

Eaton Corporation

Varian Associates, Inc.

Tel Epion Corporation

Jersey Nuclear-avco Isotopes, Inc.

USA As Represented by Secretary of the Navy

Axcelis Technologies, Inc.

Avco Everett Research Laboratory, Inc.

Michael E. Mack

Michael E Mack

Matthew C Gwinn

John J Hautala

Martin D Tabat

Irving Itzkan

Leo Klos

Robert K Becker

Jaime A Woodroffe

Yan Shao

Ronald F Holsinger

Richard G Morton

David Richard Swenson

Richard P Torti

Bruce K Libby

Herbert P Kent

Jonathan A Jost

Paul E Lustiber

Michel Pharand

Donna B Northam

Bertrand E Plourde

David J Fish

A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle assembly having a gas source, a stagnation chamber and a nozzle that is configured to introduce under high pressure one or more gases through the nozzle to a vacuum vessel in order to produce a gas cluster beam. Additionally, the GCIB source comprises a gas skimmer positioned downstream from the nozzle assembly that is configured to reduce the number of energetic, smaller particles in the gas cluster beam. Furthermore, the GCIB source comprises a beam adjustment device positioned downstream from the gas skimmer that is configured to adjust at least one beam property of the gas cluster beam, and an ionizer positioned downstream from the beam adjustment device that is configured to ionize the gas cluster beam to produce a GCIB.

Method and device for adjusting a beam property in a gas cluster ion beam system

System and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components. Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB. The larger currents transport greater quantities of gas in the GCIB. A vented faraday cup beam measurement system maintains beam dosimetry accuracy despite the high gas transport load.

System for and method of gas cluster ion beam processing

An ionizer for forming a gas-cluster ion beam is disclosed including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) for providing electrons to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about the gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii. In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.

Ionizer and method for gas-cluster ion-beam formation

Apparatus and methods for improving beam stability in high current gas-cluster ion beam systems by reducing the frequency of transients occurring in the vicinity of the ionizer through use of shielding conductors and distinct component electrical biasing to inhibit backward extraction of ions from the ionizer towards the gas-jet generator.

Method and apparatus for improved beam stability in high current gas-cluster ion beam processing system

Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

Method and apparatus for improved processing with a gas-cluster ion beam

Methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system without necessitating the rejection of a portion of the beam through magnetic or electrostatic mass analysis. The invention uses time-of-flight measurement to estimate or monitor cluster ion size distribution either before or during processing of a workpiece. The measured information is displayed and incorporated in automated control of a GCIB processing system.

Gas cluster ion beam size diagnostics and workpiece processing

A method and apparatus for gas cluster ion beam (GCIB) processing uses X-Y scanning of the workpiece relative to the GCIB. A neutralizer reduces surface charging of the workpiece by the GCIB. A single Faraday cup sensor is used to measure the GCIB current for dosimetry and scanning control and also to measure and control the degree of surface charging that may be induced in the workpiece during processing.

Charging control and dosimetry system for gas cluster ion beam

In accordance with the present invention, an ion implanter including a rotatable support disposed in an implantation chamber of an ion beam implanter for supporting a plurality of wafer workpieces. The rotatable support includes a hub adapted to be rotated about an axis of rotation substantially parallel to a direction of an ion beam beam line entering the implantation chamber. The rotatable support further includes a plurality of wafer support members adapted to be attached to the hub, each wafer support member adapted to support at least one of the wafer workpieces. Each wafer support member includes an attachment structure for affixing the support to the rotating member and a wafer support pad extending from the attachment structure and passing through the beam line as the hub rotates. The wafer support pad includes a wafer support surface facing the beam line that includes a concave portion. Preferably, the concave portion of the wafer support surface is cylindrically shaped and a central axis of an imaginary cylinder partially formed by the concave portion intersects an axis of rotation of the hub. A radius of curvature of the concave portion is large, for a 300 mm. disk shaped wafer, the radius of curvature is 7 meters. Each wafer support member further includes a clamp for releasably securing a wafer workpiece to the wafer support pad. Upon rotation of the hub at a predetermined angular velocity, the workpiece conforms to a shape of the concave portion due to a component of centrifugal force normal to a surface of the wafer support surface.

Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter

A charge neutralization monitor monitors the operation of a charge neutralization system for an ion implantation system. The charge neutralization system produces neutralizing electrons in a region through which an ion beam passes in treating one or more workpieces. The charge neutralization monitor applies a suitable voltage to a target electrode positioned to collect neutralizing electrons produced by the charge neutralization system. The charge neutralization monitor then determines the available neutralizing electron current that may be produced by the charge neutralization system by monitoring the current flowing through the target electrode.

Method and apparatus for monitoring charge neutralization operation

A magnetically suppressed Faraday system for use in an ion beam treatment system, such as an ion implanter, includes a Faraday cage defining a chamber having an entrance, and a magnetic suppression assembly positioned at the entrance of the chamber. The downstream end of the Faraday cage is positioned adjacent to a workpiece such as a semiconductor wafer. The magnetic suppression assembly includes a suppression magnet structure for producing suppression magnetic fields of sufficient strength to inhibit escape of electrons from the chamber, a field cancellation magnet structure for producing cancellation magnetic fields for substantially canceling magnetic fields, produced by other magnets in the magnetic suppression assembly, near the downstream end of the chamber, and an angle correction magnet structure for producing angle correction magnetic fields selected such that the ion beam is subjected to zero or nearly zero net angular deflection as it passes through the Faraday system.

Zero deflection magnetically-suppressed Faraday for ion implanters

A slit assembly for use in a charged particle beam system wherein a charged particle beam is directed along a beam path. The slit assembly may be a mass resolving slit assembly for an ion implanter. The slit assembly includes first and second cylinders spaced apart from each other. Opposing surfaces of the first and second cylinders adjacent to the beam path define a slit for passing the charged particle beam. The first and second cylinders have first and second central axes, respectively. The slit assembly further includes a drive system for rotating the first cylinder about the first central axis and for rotating the second cylinder about the second central axis. The slit assembly provides low contamination and a long operating life. The slit assembly may include a system for adjusting the width of the slit. The slit assembly may further include a cooling system for controlling the temperatures of the first and second cylinders.

Charged particle beam system having beam-defining slit formed by

A fluid flow control for use with a process chamber. In the disclosed embodiment, the process chamber is for ion implantation of a workpiece and the fluid flow control is to assure the flow rates are maintained at values which are efficient in evacuating and pressurizing the chamber but are not high enough to dislodge particulate contaminants from the process chamber walls. In the disclosed design, the invention has utility both in instances in which wafers are directly inserted into the process chamber for ion implantation and in which the wafers are inserted into the chamber by use of a load-lock which avoids the requirement that the process chamber be cyclicly pressurized and depressurized.

Fluid flow control method and apparatus for minimizing particle

A fluid flow control for use with a process chamber. In the disclosed embodiment, the process chamber is for ion implantation of a workpiece and the fluid flow control is to assure the flow rates are maintained at values which are efficient in evacuating and pressurizing the chamber but are not high enough to dislodge particulate contaminate from the process chamber walls. In the disclosed design, the invention has utility both in instances in which wafers are directly inserted into the process chamber for ion implantation and in which the wafers are inserted into the chamber by use of a load-lock which avoids the requirement that the process chamber be cyclicly pressurized and depressurized.

A fluid flow control for use with a process chamber. In the disclosed embodiment, the process chamber is for ion implantation of a workpiece and the fluid flow control is to assure the flow rates are maintained at values which are efficient in evacuating and pressurizing the chamber but are not high enough to dislodge particulate contaminants from the process chamber walls. In the disclosed design, the invention has utility both in instances in which wafers are directly inserted into the process chamber for ion implantation and in which the wafers are inserted into the chamber by use of a load-lock which avoids the requirement that the process chamber by cyclicly pressurized and depressurized.

The present invention provides a jitter stable electro-optical modulator for modulating a high power, repetitively pulsed laser having an optical risetime (10% to 90%) of the order of nanoseconds. The electro-optical modulator includes a birefringent electro-optical device; a hydrogen thyratron operated at a preselected high pressure and having an 'ON' and an 'OFF' state; first means responsive to the 'ON' state of the thyratron for impressing a first preselected voltage across the birefringent electro-optical device; second means responsive to the 'OFF' state of the hydrogen thyratron for impressing a second preselected voltage across the electro-optical modulator at a time coincident with the laser buildup interval; and means for repetitively driving the hydrogen thyratron into the 'ON' and the 'OFF' states repetitively at a preselected repetition rate. The selectively pressurized hydrogen thyratron is placed within a close-fitting vented copper housing and is electrically connected across the electrodes of the birefringent device by an impedance matching network and a coaxial cable.

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Manchester, MA, United States of America

Michael E Mack