Advanced Analogic Technologies Incorporated

Advanced Analogic Technologies (hong Kong) Limited

Siliconix Incorporated

Other

Silinconix, Inc.

Michael E Cornell

Richard Kent Williams

Wai Tien Chan

Hamza Yilmaz

Jun W Chen

Wai Tien Chen

Mohamed N Darwish

Mike F Chang

Wayne Bryan Grabowski

Benjamin R Barber

Jonathan Goldszmidt

James Doerhoff

Jeffrey Rovenpor

Agnes Yeung

Juiping Chuang

Richard Bordoni

David B Ponterio

David Grasso

Sahib Singh

Julia Brady

Ahron Rosenfeld

Max Brivic

Jue Wei Chen

The present invention includes a phonetic alphabet with clarifiers and modifiers that aid in the teaching of reading skills to individuals with dyslexia, dyscalculia, and other neurological impairments when the present invention letters are connected horizontally in series with clarifiers and modifiers to form a word, a phrase, a sentence, and/or a paragraph. The present invention further includes mathematical symbols for teaching math skills to individuals with dyslexia, dyscalculia, and other neurological impairments when predetermined geometric shapes are arranged to form numbers of a base 10 counting system that are capable for using in additional, subtraction, multiplication, division. The present invention of mathematical symbols includes whole numbers, real numbers, integers, fractions, and decimals. The present invention also includes 2D and 3D tools and methods of using same.

Methods and apparatus for teaching reading and math skills to individuals with dyslexia, dyscalculia, and other neurological impairments

A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa. When the substrate is subjected to thermal processing, the buried layer diffuses upward, the dopant in the mesa diffuses downward until the two dopants merge to form an isolation region or a sinker extending downward from the surface of the epitaxial layer to the buried layer. In another embodiment, dopant is implanted between dielectrically filled trenches at a high energy up to several MeV, then diffused, combining the benefits of deep implantation and trenched constrained diffusion to achive deep diffusions with a minimal thermal budget.

Method of fabricating trench-constrained isolation diffusion for semiconductor devices

A curb climbing wheelchair system having left and right side attachments are designed to be attached to left and right side portions, respectively, of a standard wheelchair to enable a wheelchair occupant to climb a curb, bump or other obstruction without the aid of another individual. Each attachment includes a ramp extending from a telescoping arm that is designed to be attached, via a clamping system, to one side of the wheelchair. When not in use, the ramps are folded and stowed away on the sides of the wheelchair. During use, the ends of the ramps are placed on the curb to allow the wheelchair occupant to roll up the curb. To retrieve the ramps (now disposed behind the wheelchair), the wheelchair occupant moves the telescoping arms, if necessary with the aid of an attached circular handle, to lift the ramps thus allowing the wheelchair occupant to grab the ramps. The retrieved ramps then are stowed away until needed.

Curb climbing wheelchair attachment

A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa. When the substrate is subjected to thermal processing, the buried layer diffuses upward, the dopant in the mesa diffuses downward until the two dopants merge to form an isolation region or a sinker extending downward from the surface of the epitaxial layer to the buried layer. In another embodiment, dopant is implanted between dielectrically filled trenches at a high energy up to several MeV, then diffused, combining the benefits of deep implantation and trenched constrained diffusion to achieve deep diffusions with a minimal thermal budget.

Trench-constrained isolation diffusion for integrated circuit die

A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology

An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.

Methods of fabricating isolation structures in epi-less substrate

Modular CMOS analog integrated circuit and power technology

In a trench-gated MOSFET including an epitaxial layer over a substrate of like conductivity and trenches containing thick bottom oxide, sidewall gate oxide, and conductive gates, body regions of the complementary conductivity are shallower than the gates, and clamp regions are deeper and more heavily doped than the body regions but shallower than the trenches. Zener junctions clamp a drain-source voltage lower than the FPI breakdown of body junctions near the trenches, but the zener junctions, being shallower than the trenches, avoid undue degradation of the maximum drain-source voltage. The epitaxial layer may have a dopant concentration that increases step-wise or continuously with depth. Chained implants of the body and clamp regions permits accurate control of dopant concentrations and of junction depth and position. Alternative fabrication processes permit implantation of the body and clamp regions before gate bus formation or through the gate bus after gate bus formation.

Recessed clamping diode fabrication in trench devices

Growing community of inventors

Campbell, CA, United States of America

Michael E Cornell