Silicon Graphics, Incorporated

Michael E Anderson

Martin M Deneroff

Daniel E Lenoski

James P Laudon

John C Manton

David Alexander

Kumar Venkatasubramaniam

Richard G Bahr

A high memory capacity dual in-line memory module (DIMM) for use in a directory-based, distributed shared memory multiprocessor computer system including a data memory for storing data and a state memory for storing state or directory information corresponding to at least a portion of the data. The DIMM allows the data and the state information to be accessed independently. The DIMM can be configured in a plurality of storage capacities.

High memory capacity DIMM with data and state memory

A dynamic random access memory (DRAM) single in-line memory module (SIMM) having optimized physical dimensions achieves high speed and high storage capacity. The DRAM SIMM has a printed circuit board with a multi-contact connector, a plurality of DRAM sets, each set having a plurality of DRAM chips mounted on the printed circuit board, and a plurality of buffers which are also mounted on the printed circuit board. The number of buffers is equal to the number of DRAM sets. Various standard DRAM chips can be used on the SIMM to achieve different performance and storage capacity, while maintaining plug compatibility of the multi-contact connector with a memory board. The buffers buffer the control and address signals for the DRAM chips, which is necessary to keep control and address signal integrity due to the number of DRAMS. The buffers permit each DRAM to receive the necessary control and address signals in a more synchronized fashion, so that relative delays are well controlled. The multi-contact connector has a first group of pins for receiving control and address signals, a second group of pins for data input/output signals, a third group of pins for indicating the type code of the SIMM, and a fourth group of pins for power and ground connections.

High memory capacity DRAM SIMM

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Sunnyvale, CA, United States of America

Michael E Anderson