Skyworks Solutions, Inc.

Allumax Tti, LLC

Other

Skyworks Global Pte. Ltd.

Michael David Hill

David Bowie Cruickshank

Jeffrey Alan Shunkwiler

David Martin Firor

Srinivas Polisetty

John Jianzhong Jiang

Iain Alexander MacFarlane

Constance M Griffith

Iain Alexander Macfarlane

Kelvin Mitchell Anderson

Neil Bruce Coats

Paul T DiCarlo

Scott David Wilson

Kim Rene Smith

Jianzhong Jiang

Peter Ledel Gammel

Rei Goto

Keiichi Maki

Benjamin Paul Abbott

Stefan Bader

Yumi Torazawa

John Christopher Deriso

Takanori Yasuda

Brian Murray

Barry Treadway

Rickard Paul O'Donovan

David Cronin

David Albert Feld

Kwang Jae Shin

Alexandre Augusto Shirakawa

James Gerard O'Callaghan

Troy A Hill

Rickard Paul O'DONOVAN

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Acoustic wave device with wurtzite based piezoelectric layer with high acoustic velocity

Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—AlO—TiOsystem comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide and a titanium oxide crystallized in a rutile structure.

Low loss tangent dielectric based on spinel-structured oxide

An acoustic wave device is disclosed. The acoustic wave device can include a substrate, an interdigital transducer electrode disposed on the substrate, and a temperature compensation layer over the interdigital transducer electrode. The IDT electrode includes a lower layer, an upper layer, and a buffer layer disposed between the lower layer and the upper layer. A modulus of elasticity of the buffer layer is less than a modulus of elasticity of the upper layer. The buffer layer is configured to release stress between the lower layer and the upper layer caused due to a difference between a coefficient of thermal expansion of the lower layer and a coefficient of thermal expansion of the upper layer.

Acoustic wave device with interdigital transducer electrode having buffer layer

Disclosed herein are embodiments of n and p-type components with high temperature refractory material having a perovskite crystal structure. The material may be doped to generate, for example, p-type and n-type sensor legs. In some embodiments, expensive materials may be avoided. Further, the disclosed materials can avoid high temperature reaction between n-type components and p-type components.

High temperature oxide-based system for thermoelectric sensor applications

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Acoustic wave device with wurtzite based piezoelectric layer

A temperature compensated surface acoustic wave device is disclosed. The temperature compensated surface acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a buffer layer between the first layer and the second layer. A thermal conductivity of the second layer is greater than a thermal conductivity of the buffer layer. The buffer layer can be a titanium layer. A thickness of the buffer layer can be in a range of 20 nm to 200 nm, or in a range of 5% to 30% of a thickness of the interdigital transducer electrode.

Temperature compensated acoustic wave device with multilayer interdigital transducer electrode including buffer layer

Disclosed is piezoelectric material formed of aluminum nitride (AlN) doped with one or more of zinc (Zn), silicon (Si), lithium (Li), calcium (Ca) and/or oxygen (O) and an acoustic wave resonator including same.

Aluminum nitride dopant scheme for bulk acoustic wave filters

Disclosed herein are ceramic materials, such as bismuth substituted garnets, which can have high curie temperatures and high dielectric constants. In certain implementations, indium can be incorporated into the ceramic to improve certain properties and to avoid calcium compensation. The ceramic materials disclosed herein can be particular advantageous for below resonance applications.

Magnetic materials with high curie temperatures and dielectric constants

The disclosed technology relates to a ceramic composition and an article formed therefrom. A ceramic article for radio frequency applications is formed of a ceramic material having a chemical formula represented by: BiYCaFeMVOor BiYCaFeVInO. The ceramic material has a composition such that a normalized change in saturation magnetization (Δ4πMs), defined as Δ4πMs=[(4πMs at 20° C.)−(4πMs at 120° C.)]/(4πMs at 20° C.), is less than about 0.35.

High saturation magnetization and high dielectric constant ferrites

The disclosed technology generally relates dielectric materials and methods of forming the same, and more particularly to a combination of co-fireable dielectric materials that can be attached to each other without the use of adhesives. In an aspect, a composite article comprises a magnetic portion comprising a nickel zinc ferrite. The composite article additionally comprises a non-magnetic portion contacting the magnetic portion, the non-magnetic portion comprising a spinel-structured oxide comprising MgAlTiOand having a dielectric constant between about 7 and 14, wherein 0<x≤1.

Methods of forming articles having spinel-based oxides containing magnesium, aluminum and titanium

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example barium tungstate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

Low temperature co-fireable dielectric materials

A method of forming an integrated microstrip circulator includes translating a ferrite disc into an aperture in a dielectric substrate, securing the ferrite disc in the dielectric substrate with an adhesive to form a composite structure, and forming circuitry on an upper surface of the composite structure and forming surface mount contacts on a lower surface of the composite structure by metallizing the upper and lower surfaces of the composite structure.

Fabrication of surface mount microstrip circulators using a ferrite and ceramic dielectric assembly substrate

Disclosed is an acoustic wave resonator comprising a substrate material formed of aluminum nitride (AlN) doped with one or more of beryllium (Be), strontium (Sr), and sodium (Na) to enhance performance of the acoustic wave resonator.

Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In particular, a two-phase material can form based on the rutile phase of titanium oxide along with a spinel structure of ZnAlO. This material can have a dielectric constant below 15 which is simultaneously temperature stable.

Temperature-stable, low-dielectric constant material with an ultra-low loss tangent

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

Growing community of inventors

Frederick, MD, United States of America

Michael David Hill