Applied Materials, Inc.

Intel Corporation

Michael D Willwerth

Valentin Nikolov Todorow

David Palagashvili

Patrick John Tae

John Patrick Holland

Dan Katz

Leonard Michael Tedeschi

Yaoling Pan

Shahid Rauf

Changhun Lee

Jeffrey Ludwig

Alexander Miller Paterson

Benjamin Schwarz

Roberto Cesar Cotlear

Kartik Ramaswamy

Andrew Nguyen

Philip Allan Kraus

Ajit Balakrishna

Lei Lian

Matthew Fenton Davis

Alexander Matyushkin

Theodoros Panagopoulos

Zhaozhao Zhu

Blake Erickson

Stephen Yuen

Daniel Thomas McCormick

Hun Sang Kim

Yasuhiro Uo

Andrei Ivanovich Netchitaliouk

Kenneth S Collins

Yang Yang

Jennifer Y Sun

Vijay D Parkhe

Tza-Jing Gung

Ankur Agarwal

Yogananda Sarode Vishwanath

Andreas Schmid

Zhiqiang Guo

Jingbao Liu

Michael G Chafin

Bradley J Howard

Chih-Hsun Hsu

Anand Kumar

Tsung Feng Wu

Dmitry Lubomirsky

Rajinder Dhindsa

Wei Liu

Mark Joseph Saly

Douglas A Buchberger, Jr

Kelvin Chan

Kallol Bera

Tom K Cho

Samer Banna

Meihua Shen

Ming Xu

Keith R Berding

Michael C Kutney

Konstantin Makhratchev

Phillip A Criminale

Shashank C Deshmukh

Tom K Choi

Ashish Goel

Denis M Koosau

Ashley M Okada

Xing Lin

Valentin N Todorov

Gary Leray

Daniel Sang Byun

Vijaykumar Krithivasan

Brian K Hatcher

Charles Hardy

Lisa J Enman

Xiaopu Li

Kiyki-Shiy N Shang

Mikhail Taraboukhine

Barry Craver

Sivasankar Nagarajan

James E Sammons, Iii

Shimin Mao

Albert Barrett Hicks, Iii

Yohei Kawase

Duc Dang Buckius

Hoan Hai Nguyen

Sehn Thach

Chih-shun Lu

Ying-Sheng Lin

Li-Sheng Chiang

Alex Erenstein

Anantha Subramani

Eiichi Matsusue

Hean Cheal Lee

Anh-Kiet Quang Phan

Jong I Shin

Barrett Finch

Hoan Hguyen

Aditi Mithun

An apparatus includes a base component and a plurality of collimators housed within the base component. Each collimator of the plurality of collimators corresponds to a respective location of a plurality of locations of a wafer in an etch chamber. The plurality of locations includes a center location of the wafer, a plurality of inner ring locations along an inner ring of the wafer associated with a first set of radially symmetric optical emission spectroscopy (OES) signal sampling paths, and a plurality of outer ring locations along an outer ring of the wafer associated with a second set of radially symmetric OES signal sampling paths.

Spatial optical emission spectroscopy for etch uniformity

Embodiments disclosed herein include a sensor assembly. In an embodiment, the sensor assembly comprises a sensor module and a housing assembly. In an embodiment, the sensor module comprises a substrate, a capacitor with a first electrode and a second electrode on the substrate, and a capacitive-to-digital converter (CDC) electrically coupled to the first electrode and the second electrode. In an embodiment, the housing assembly is attached to the sensor module and comprises a shaft, wherein the shaft is hollow, and a cap over a first end of the shaft, wherein the cap has an opening to expose the capacitor.

Capacitive sensor housing for chamber condition monitoring

Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

Gas distribution plate with UV blocker

A gas distribution apparatus is provided having a first reservoir with a first upstream end and a first downstream end and a second reservoir with a second upstream end and a second downstream end. A reservoir switch valve is in fluid communication with the first downstream end of the first reservoir and the second downstream end of the second reservoir. The reservoir switch valve operable to selectively couple the first reservoir to an outlet of the reservoir switch valve when in a first state, and couple the second reservoir to the outlet of the reservoir switch valve when in a second state. A plurality of proportional flow control valves are provided having inlets coupled in parallel to the outlet of the reservoir switch valve The plurality of proportional flow control valves have outlets configured to provide gas to a processing chamber.

Fast gas exchange apparatus, system, and method

The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Sensors and system for in-situ edge ring erosion monitor

A system includes a transparent crystal, at least part of which is embedded within a wall and a liner of a processing chamber. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to an interior of the processing chamber. A transparent thin film is deposited on the distal surface and has chemical properties substantially matching those of the liner. A light coupling device is to: transmit light, from a light source, through the proximal end of the transparent crystal, and focus, into a spectrometer, light received reflected back from a combination of the distal surface, a surface of the transparent thin film, and a surface of a process film layer deposited on the transparent thin film. The spectrometer is to detect a first spectrum within the focused light that is representative of the process film layer.

Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall

An apparatus includes a base component and collimators housed within the base component. The collimators correspond to collection cylinders for sampling optical emission spectroscopy (OES) signals with respect to locations of a wafer in an etch chamber. The apparatus further includes a guide, operatively coupled to the plurality of collimators, to guide the sampling of the OES signals along paths for sampling the OES signals.

Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

Capacitive sensor for chamber condition monitoring

Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

Resonant process monitor

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

Capacitive sensing data integration for plasma chamber condition monitoring

Gas distribution plate with UV blocker at the center

Embodiments of the present disclosure generally relate to a lift pin assembly used for de-chucking substrates. The lift pin assembly includes a base and one or more lift pin holders. Each lift pin holder includes a first portion and a second portion. The first portion is coupled to the base by a metal connector and the second portion is coupled to the first portion by a metal connector. A resistor is disposed in the first portion of the lift pin holder. The second portion includes a lift pin support for supporting a lift pin. The lift pin, the lift pin support, and the metal connectors are electrically conductive. The base is connected to a reference voltage, such as the ground, forming a path for the residual electrostatic charge in the substrate from the substrate to the reference voltage.

Conductive wafer lift pin o-ring gripper with resistor

Implementations described herein provide a chamber lid assembly. In one embodiment, a chamber lid assembly includes a heater embedded in a dielectric body forming a boundary of a processing chamber, wherein the heater has one or more heating zones that are independently controlled.

Chamber lid with integrated heater

Substrate support pedestal

Growing community of inventors

Campbell, CA, United States of America

Michael D Willwerth