Lucent Technologies Inc.

At+t Corp.

Michael D Williams

Keith Wayne Goossen

John E Cunningham

William Y Jan

Wayne Harvey Knox

Jane E Zucker

Tien-Heng Chiu

Stephen Cason Shunk

A method is described for the preparation of a DFB/DBR laser which includes an electro-optic grating formed by periodically modulating the index of refraction of the cladding employed. The method involves depositing a waveguide upon a semi-insulating or doped substrate and then depositing an active layer upon the resultant structure. The active layer is subsequently selectively etched and a cladding material deposited adjacent thereto and electrically isolated therefrom. The cladding is then selectively patterned with a conductive material by photolithographic techniques to yield a grating to periodically modulate the index of refraction.

Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers

Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

Process of making an optoelectronic devices utilizing multiple quantum

Optoelectronic devices utilizing multiple quantum well pin structures

Conventional microfabrication techniques in conjunction with the precise growth of layers of single crystalline materials by epitaxial growth techniques allow the creation of electro-optic microstructures which achieve high reflectivity with only few periods of layer pairs. Standard lithographic techniques are utilized to fabricate quantum wells which are confined on both sides by air, acrylic resin, or vacuum. The quantum wells are fabricated from spatially and compositionally modulated III-V superlattices in which alternate layers of the structures are sacrificed by selective etching. The structures are patterned such that the quantum wells are suspended between support posts.

Free standing quantum well structure

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Michael D Williams