Applied Materials, Inc.

Other

Kla Tencor Corporation

Onwafer Technologies, Inc.

Michael D Welch

Hongching Shan

Paul E Luscher

James D Carducci

Bryan Y Pu

Evans Yip Lee

Siamak Salimian

Harald Herchen

Claes H Bjorkman

Hamid Noorbakhsh

William Brown

Walter R Merry

Robert W Wu

Kuang-Han Ke

Hongqing Shan

Brigitte C Stoehr

Ji Ding

Zongyu Li

Richard Blume

Homgqing Shan

Costas J Spanos

James Chang Wang

Mason L Freed

Henry Fong

Hiroji Hanawa

Ling Chen

Peter K Loewenhardt

Alfred W Mak

Nils Johansson

Semyon Sherstinsky

Zhong Qiang Hua

Roger Alan Lindley

Rolf A Guenther

Richard W Plavidal

Richard Raymond Mett

Zhifeng Sui

Paul Douglas MacDonald

Melisa J Buie

Leonel Arturo Zuniga

Kameshwar Poolla

Kaushik Vaidya

Son M Phi

Dean Hunt

Samuel C Wilson

Jim Carducci

Hong Ching Shan

Xue Yu Qian

Michiel V P Krüger

Sue Zhang

One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. One embodiment of the present invention includes a software program that can be implemented in a computer for optimizing the performance of a process tool for processing a workpiece.

Methods of and apparatuses for maintenance, diagnosis, and optimization of processes

A fishing pole strike alert device having an anchor pivotally connected to a rod holder with spring tensioned members positioned between the anchor and the rod holder. The tensioning members vary the angular displacement of the rod holder and anchor, which is used in an electrical alarm circuit with alarm contacts actuatable through the angular displacement between the anchor and rod holder with one of the contacts user selectively positionable to vary the pressure required to actuate the alarm circuit. The electrical circuit uses a self-contained DC power source, preferably a battery. The present invention also provides a fishing strike pole alert device wherein the anchor is a stake decreasing diametrically to a point whereby the anchor can be inserted into the ground.

Fishing pole strike alert

This invention seeks to provide methods and apparatus that can improve the accuracy of measured parameter data used for processing workpieces. One aspect of the present invention includes methods of measuring process conditions with low distortion of the measurements caused by the measuring apparatus. The measurements include data for applications such as data for monitoring, controlling, and optimizing processes and process tools. Another aspect of the present invention includes apparatus for measuring substantially correct data for applications such as generating data for monitoring, controlling, and optimizing processes and process tools.

Methods and apparatus for low distortion parameter measurements

In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

Double slit-valve doors for plasma processing

A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.

Method and apparatus for etching photomasks

The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.

Configurable single substrate wet-dry integrated cluster cleaner

A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.

Magnetic barrier for plasma in chamber exhaust

The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

Temperature controlled dome-coil system for high power inductively coupled plasma systems

In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.

Endpoint detection in substrate fabrication processes

A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Dielectric etch chamber with expanded process window

The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135&deg;. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

Shield or ring surrounding semiconductor workpiece in plasma chamber

A chamber comprises a support for holding a substrate and a sensor system adapted to detect the presence or proper placement of the substrate on the support . The support comprises a window that is transparent and adapted to transmit light therethrough. The sensor system comprises a light source adapted to direct a light beam through the window and a light sensor in the path of the light beam . The light beam is sensed by the light sensor when the substrate is properly positioned and the light beam is blocked from the light sensor when the substrate is improperly positioned or vice versa. Preferably, the support comprises an electrostatic chuck adapted to electrostatically hold the substrate , the electrostatic chuck comprising a window composed of transparent material or a cut-out or a hole therein.

Apparatus and method for detecting a presence or position of a substrate

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Pleasanton, CA, United States of America

Michael D Welch